SN74ABT861

ACTIVO

Transceptores de 10 bits con salidas de 3 estados

Detalles del producto

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High-Impedance State During Power Up and Power Down
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs

EPIC-IIB is a trademark of Texas Instruments Incorporated.

  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High-Impedance State During Power Up and Power Down
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs

EPIC-IIB is a trademark of Texas Instruments Incorporated.

The 'ABT861 are 10-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT861 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT861 is characterized for operation from -40°C to 85°C.

The 'ABT861 are 10-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT861 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT861 is characterized for operation from -40°C to 85°C.

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Documentación técnica

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Tipo Título Fecha
* Data sheet 10-Bit Transceivers With 3-State Outputs datasheet (Rev. C) 01 may 1997
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 jul 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 ago 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 may 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 ene 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 ago 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 jun 1997
Application note Designing With Logic (Rev. C) 01 jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 mar 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 dic 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 oct 1996
Application note Live Insertion 01 oct 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 may 1996

Diseño y desarrollo

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Placa de evaluación

14-24-LOGIC-EVM — Módulo de evaluación genérico de productos lógicos para encapsulados D, DB, DGV, DW, DYY, NS y PW de

El módulo de evaluación (EVM) 14-24-LOGIC-EVM está diseñado para admitir cualquier dispositivo lógico que esté en un empaquetado D, DW, DB, NS, PW, DYY o DGV de 14 a 24 pines.

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SOIC (DW) 24 Ultra Librarian

Pedidos y calidad

Información incluida:
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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
  • Lugar de ensamblaje

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