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SN74CB3Q3245

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Interruptor de bus FET de 8 canales y 3.3 V, 1:1 (SPST)

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SN74CB3Q3245

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Detalles del producto

Protocols Analog Configuration 1:1 SPST Number of channels 8 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 9 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 8 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 9 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm) TVSOP (DGV) 20 32 mm² (5 mm × 6.4 mm) SSOP (DBQ) 20 51.9 mm² (8.65 mm × 6 mm) VQFN (RGY) 20 15.75 mm² (4.5 mm × 3.5 mm)
  • High-Bandwidth Data Path (up to 500MHz)
  • Equivalent to IDTQS3VH384 Device
  • 5V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5V Switching With 3.3V VCC
    • 0 to 3.3V Switching With 2.5V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5pF Typ)
  • Fast Switching Frequency (f OE = 20MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 1mA Typical)
  • VCC Operating Range From 2.3V to 3.6V
  • Data I/Os Support 0 to 5V Signaling Levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
  • Control Inputs Can Be Driven by TTL or 5V/3.3V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000V Human-Body Model (A114B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
  • High-Bandwidth Data Path (up to 500MHz)
  • Equivalent to IDTQS3VH384 Device
  • 5V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5V Switching With 3.3V VCC
    • 0 to 3.3V Switching With 2.5V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5pF Typ)
  • Fast Switching Frequency (f OE = 20MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 1mA Typical)
  • VCC Operating Range From 2.3V to 3.6V
  • Data I/Os Support 0 to 5V Signaling Levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
  • Control Inputs Can Be Driven by TTL or 5V/3.3V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000V Human-Body Model (A114B, Class II)
    • 1000V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The SN74CB3Q3245 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 device provides an optimized interface device designed for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3245 device is organized as an 8-bit bus switch with a single output-enable ( OE) input. When OE is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when the device is powered down. The device has isolation during power off.

To verify the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3245 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 device provides an optimized interface device designed for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3245 device is organized as an 8-bit bus switch with a single output-enable ( OE) input. When OE is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when the device is powered down. The device has isolation during power off.

To verify the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos SN74CB3Q3245 8-Bit FET Bus Switch 2.5V/3.3V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. C) PDF | HTML 20/08/2026
Nota sobre la aplicación Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2/06/2022
Nota sobre la aplicación Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 1/12/2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 6/01/2021

Diseño y desarrollo

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Modelo de simulación

SN74CB3Q3245 IBIS Model (Rev. A)

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