SN74CB3Q6800

ACTIVO

Interruptor de bus FET de uso general de 3.3 V, 1:1 (SPST) y 10 canales con salidas precargadas

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Hoja de datos

document-pdfAcrobat SN74CB3Q6800 datasheet (Rev. A) (Inglés)

SN74CB3Q6800

ACTIVO

Hoja de datos

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Detalles del producto

Protocols

Analog

Configuration

1:1 SPST

Number of channels

10

Bandwidth (MHz)

500

Ron (typ) (mΩ)

4500

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

750

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

9

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Protocols

Analog

Configuration

1:1 SPST

Number of channels

10

Bandwidth (MHz)

500

Ron (typ) (mΩ)

4500

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

750

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

9

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

SSOP (DBQ)

24

51.9 mm² (8.65 mm × 6 mm)

TSSOP (PW)

24

49.92 mm² (7.8 mm × 6.4 mm)

TVSOP (DGV)

24

32 mm² (5 mm × 6.4 mm)

High-Bandwidth Data Path (Up To 500 MHz)
5-V Tolerant I/Os with Device Powered-Up or Powered-Down
Low and Flat ON-State Resistance (r_on) Characteristics Over Operating Range (r_on = 4.5 Typical)
Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V V_CC
- 0- to 3.3-V Switching With 2.5-V V_CC
B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
Supports PCI Hot Plug
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 3.5 pF Typical)
Fast Switching Frequency (f_ON\= 20 MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 0.75 mA Typical)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

High-Bandwidth Data Path (Up To 500 MHz)
5-V Tolerant I/Os with Device Powered-Up or Powered-Down
Low and Flat ON-State Resistance (r_on) Characteristics Over Operating Range (r_on = 4.5 Typical)
Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V V_CC
- 0- to 3.3-V Switching With 2.5-V V_CC
B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
Supports PCI Hot Plug
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 3.5 pF Typical)
Fast Switching Frequency (f_ON\= 20 MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 0.75 mA Typical)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (V_CC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (V_CC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Documentación principal	Tipo	Título	Opciones de formato	Fecha
*	Hoja de datos	SN74CB3Q6800 datasheet (Rev. A)		20/11/2003
	Nota sobre la aplicación	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2/06/2022
	Nota sobre la aplicación	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	1/12/2021
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	6/01/2021

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