패키징 정보
| 패키지 | 핀 SOIC (D) | 16 |
| 작동 온도 범위(°C) -40 to 85 |
| 패키지 수량 | 캐리어 40 | TUBE |
BQ2204A의 주요 특징
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 2-input decoder for control of up to 4 banks of SRAM
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
BQ2204A에 대한 설명
The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.
During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.
During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.