패키징 정보
| 패키지 | 핀 TSSOP (PW) | 8 |
| 작동 온도 범위(°C) -55 to 125 |
| 패키지 수량 | 캐리어 250 | SMALL T&R |
INA240-SEP의 주요 특징
- VID V62/18615
- Radiation Hardened
- Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C
- ELDRS Free to 30 krad(Si)
- Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si)
- Space Enhanced
Plastic
- Controlled Baseline
- Gold Wire
- NiPdAu Lead Finish
- One Assembly and Test Site
- One Fabrication Site
- Available in Military (–55°C to 125°C) Temperature Range
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
- Enhanced Mold Compound for Low Outgassing
- Enhanced PWM Rejection
- Excellent CMRR: 132 dB (Typical)
- Wide Common-Mode Range: –4 V to 80 V
- Gain: 20 V/V:
- Gain Error: 0.2% (Maximum)
- Gain Drift:
2.5 ppm/°C (Maximum)
- Offset Voltage: ±25 µV (Maximum)
- Offset Drift: 250 nV/°C (Maximum)
- Quiescent Current: 2.4 mA (Maximum)
INA240-SEP에 대한 설명
The INA240-SEP device is a voltage-output, current-sense amplifier with enhanced PWM rejection that can sense drops across shunt resistors over a wide common-mode voltage range from –4 V to 80 V, independent of the supply voltage. The negative common-mode voltage allows the device to operate below ground, accommodating the flyback period of typical solenoid applications. Enhanced PWM rejection provides high levels of suppression for large common-mode transients (ΔV/Δt) in systems that use pulse width modulation (PWM) signals (such as motor drives and solenoid control systems). This feature allows for accurate current measurements without large transients and associated recovery ripple on the output voltage.
This device operates from a single 2.7-V to 5.5-V power supply, drawing a maximum of 2.4 mA of supply current. The fixed gain is 20 V/V. The low offset of the zero-drift architecture enables current sensing with maximum drops across the shunt as low as 10-mV full-scale.