產品詳細資料

Technology family AC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type Standard CMOS Output type Push-Pull Features Standard speed (tpd > 50ns) Data rate (max) (Mbps) 100 Rating Catalog Operating temperature range (°C) -55 to 125
Technology family AC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type Standard CMOS Output type Push-Pull Features Standard speed (tpd > 50ns) Data rate (max) (Mbps) 100 Rating Catalog Operating temperature range (°C) -55 to 125
SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm) PDIP (N) 14 181.42 mm² (19.3 mm × 9.4 mm)
  • AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Voltage
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

  • AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Voltage
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

The CD74AC10 contains three independent 3-input NAND gates. This device performs the Boolean function Y = (A •B • C)\ or Y = A\ + B\ + C\ in positive logic.

The CD74AC10 contains three independent 3-input NAND gates. This device performs the Boolean function Y = (A •B • C)\ or Y = A\ + B\ + C\ in positive logic.

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SN74HC10 現行 3 通道、3 輸入、2-V 至 6-V 5.2mA 驅動強度 NAND 閘 Voltage range 2V to 6V, average propagation delay 20ns, average drive strength 8mA
CD74HC10 現行 3 通道、3 輸入、2-V 至 6-V 5.2mA 驅動強度 NAND 閘 Voltage range 2V to 6V, average propagation delay 20ns, average drive strength 8mA

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 CD74AC10 datasheet 2002/11/4

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