封裝資訊
| 封裝 | 引腳 VSON-CLIP (DNS) | 10 |
| 作業溫度範圍 (°C) -40 to 150 |
| 包裝數量 | 運送包裝 250 | SMALL T&R |
CSD95379Q3M 的特色
- 92.5% System Efficiency at 12 A
- Ultra-Low Power Loss of 1.8 W at 12 A
- Max Rated Continuous Current of 20 A and Peak Current of 45 A
- High-Frequency Operation (up to 2 MHz)
- High-Density SON 3.3-mm × 3.3-mm Footprint
- Ultra-Low Inductance Package
- System Optimized PCB Footprint
- Low Quiescent (LQ) and Ultra-Low Quiescent (ULQ) Current Mode
- 3.3-V and 5-V PWM Signal Compatible
- Diode Emulation Mode with FCCM
- Tri-State PWM Input
- Integrated Bootstrap Diode
- Shoot-Through Protection
- RoHS Compliant – Lead-Free Terminal Plating
- Halogen Free
CSD95379Q3M 的說明
The CSD95379Q3M NexFET™ power stage is a highly optimized design for use in high-power, high-density synchronous buck converters. This product integrates the driver IC and NexFET technology to complete the power stage switching function. The driver IC has a built-in selectable diode emulation function that enables DCM operation to improve light load efficiency. In addition, the driver IC supports ULQ mode that enables Connected Standby for Windows® 8. With the PWM input in tri-state, quiescent current is reduced to 130 µA, with immediate response. When SKIP# is held at tri-state, the current is reduced to 8 µA (typically 20 µs is required to resume switching). This combination produces high-current, high-efficiency, and high-speed switching capability in a small 3.3-mm × 3.3-mm outline package. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.