DRV411
- Optimized for Symmetric Hall-Elements
(for example, AKM HW-322, HW-302, or similar) - Spinning Current Hall Sensor Excitation
- Elimination of Hall Sensor Offset and Drift
- Elimination of 1/f Noise
- Extended Current Measurement Range
- H-Bridge Drive Capability: 250 mA
- Precision Difference Amplifier:
- Offset and Drift: 100 µV (max), 2 µV/°C (max)
- System Bandwidth: 200 kHz
- Precision Reference:
- Accuracy: 0.2% (max)
- Drift: 50 ppm/°C (max)
- Pin-Selectable for 2.5 V, 1.65 V, and Ratiometric Mode
- Overrange and Error Flags
- Supply: 2.7 V to 5.5 V
- Packages: 4-mm × 4-mm QFN and TSSOP-20 PowerPAD™
- Temperature Range: –40°C to +125°C
The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor modules. The DRV411 provides precision excitation circuitry for the Hall-element effectively eliminating the offset and offset-drift of the Hall element. This device also provides a 250-mA H-bridge for driving the sensor compensation coil as well a precision differential amplifier to generate the output signal. The 250-mA drive capability of the H-bridge roughly doubles the current measurement range compared to conventional single-ended drive methods.
The Hall sensor front-end circuit and the differential amplifier employ proprietary offset cancelling techniques. These techniques, along with a high-accuracy voltage reference, significantly improve the accuracy of the overall current-sensor module. The output voltage is pin-selectable to support a 2.5-V output for use with a 5-V power supply, as well as 1.65-V for 3.3-V sensors.
For optimum heat dissipation, the DRV411 is available in thermally enhanced 4-mm × 4-mm QFN and TSSOP-20 with PowerPAD packages. The DRV411 is specified for operation over the full extended industrial temperature range of –40°C to +125°C.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors datasheet (Rev. B) | 2013年 12月 12日 | |
| White paper | Achieve greater precision, reliability with magnetic sensing technology | 2017年 6月 26日 | ||
| Application note | Design Considerations for the DRV411 | 2015年 2月 26日 | ||
| EVM User's guide | DRV411EVM User's Guide (Rev. A) | 2013年 11月 27日 |
設計與開發
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The DRV411EVM is an evaluation platform for the DRV411, a sensor signal conditioning integrated circuit for closed loop magnetic current sensors. The DRV411EVM allows evaluation of all aspects of the DRV411 device when connected to a user supplied hall sensor and coil. Complete schematics and a (...)
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| 封裝 | 引腳 | 下載 |
|---|---|---|
| HTSSOP (PWP) | 20 | 檢視選項 |
| VQFN (RGP) | 20 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。