產品詳細資料

Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 2 forward / 0 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 2 forward / 0 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
SOIC (D) 8 29.4 mm² 4.9 x 6 VSON (REU) 8 6 mm² 3 x 2
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 200VRMS, 280VDC working voltage
    • 570VRMS, 800VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 200VRMS, 280VDC working voltage
    • 570VRMS, 800VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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* Data sheet ISO652x General Purpose Dual-Channel Functional Isolators datasheet (Rev. B) PDF | HTML 2024年 4月 10日
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 2024年 4月 30日

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ISO6521REUEVM — 適用數位訊號雙通道功能隔離器的 ISO6521 評估模組

ISO6521REUEVM 是一款評估模組 (EVM),用於評估採用 8 接腳 DFN 封裝的雙通道 ISO6521 功能隔離器。EVM 提供額外體積,讓使用者能夠靈活新增元件,以測試各種常見應用。EVM 也具備多個測試點,以透過最少外部元件來評估裝置。

使用指南: PDF | HTML
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SOIC (D) 8 Ultra Librarian
VSON (REU) 8 Ultra Librarian

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