產品詳細資料

Protocols Analog Configuration 1:1 SPST Number of channels 1 Ron (typ) (mΩ) 5000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 7000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 1 Ron (typ) (mΩ) 5000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 7000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOT-23 (DBV) 5 8.12 mm² (2.9 mm × 2.8 mm) SOT-SC70 (DCK) 5 4.2 mm² (2 mm × 2.1 mm)
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation on All Data I/O Ports
    • 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typ)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
  • Ideal for Low-Power Portable Equipment

  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation on All Data I/O Ports
    • 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typ)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
  • Ideal for Low-Power Portable Equipment

The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN74CB3T1G125 datasheet (Rev. A) 2006/3/29
應用說明 Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/6/2
應用說明 Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/1
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/1/6

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DIP-ADAPTER-EVM — DIP 轉接器評估模組

Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.

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