Gate Driver Reference Design for Parallel IGBTs With Short-Circuit Protection and Current Buffer
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Paralleling IGBT’s becomes necessary for power conversion equipments with higher output power ratings, where single IGBT cannot provide the required load current. This TI design implements a reinforced isolated IGBT gate control module to drive  parallel IGBTs in Half bridge configuration. Paralleling IGBT’s introduces challenges at both gate driver (insufficient drive strength) as well as at system level in maintaining equal current distribution in both the IGBT’s while ensuring faster turn ON & turn OFF. This reference design uses Re-inforced isolated IGBT gate driver with integrated features like desaturation detection and soft turn off to protect the IGBT during fault conditions. Increased gate drive current (15A) is obtained through external BJT current booster stage without sacrificing the soft turn off feature. Further this design demonstrates the mechanism of avoiding gate current loops while operating IGBT’s in parallel.

  • Designed to drive parallel IGBT modules of 1200v rating with total gate charge’s upto 10µC
  • Source\sink current ratings of upto 15 Apk with external BJT buffer stage
  • IGBT short circuit protection using builtin DESAT and Adjustable soft turn-off time
  • Built in common mode choke and emitter resistance for limiting emitter loop current
  • 8000-Vpk VIOTM and 2121-Vpk VIORM reinforced isolation
  • Very high CMTI of 100KV/us

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TI Devices (1)

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Part Number Name Product Family Sample & Buy Design Kits & Evaluation Modules
ISO5852S  2.5-A / 5-A, 5.7-kV RMS single channel isolated gate driver with split output and protection  Gate drivers  Sample & Buy View Design Kits & Evaluation Modules

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Part # Package | Pins CAD File (.bxl) STEP Model (.stp)
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User guide (1)
Title Type Size (KB) Date
PDF 1952 19 Jan 2017
Design files (6)
Title Type Size (KB) Date
ZIP 186 10 Jan 2017
ZIP 1077 10 Jan 2017
PDF 1776 10 Jan 2017
PDF 354 10 Jan 2017
PDF 52 10 Jan 2017
PDF 637 10 Jan 2017

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