SLLSEQ0B August   2015  – January 2017 ISO5852S


  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Function
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Supply and Active Miller Clamp
      2. 9.3.2 Active Output Pulldown
      3. 9.3.3 Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication Output
      4. 9.3.4 Soft Turnoff, Fault (FLT) and Reset (RST)
      5. 9.3.5 Short Circuit Clamp
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1.  Recommended ISO5852S Application Circuit
        2.  FLT and RDY Pin Circuitry
        3.  Driving the Control Inputs
        4.  Local Shutdown and Reset
        5.  Global-Shutdown and Reset
        6.  Auto-Reset
        7.  DESAT Pin Protection
        8.  DESAT Diode and DESAT Threshold
        9.  Determining the Maximum Available, Dynamic Output Power, POD-max
        10. Example
        11. Higher Output Current Using an External Current Buffer
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 PCB Material
    3. 12.3 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information


  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification


  • Isolated IGBT and MOSFET Drives in:
    • Industrial Motor Control Drives
    • Industrial Power Supplies
    • Solar Inverters
    • HEV and EV Power Modules
    • Induction Heating


The ISO5852S device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

Device Information(1)

ISO5852S SOIC (16) 10.30 mm × 7.50 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Functional Block Diagram


Revision History

Changes from A Revision (September 2015) to B Revision

  • Changed the title of the data sheet from Active Safety Features to Active Protection FeaturesGo
  • Changed Feature From: Surge Immunity 12800-VPK (according to IEC 61000-4-5) To: Isolation Surge Withstand Voltage 12800-VPKGo
  • Changed the minimum external tracking (creepage) parameter to the external creepage parameterGo
  • Changed the input-to-output test voltage parameter to the apparent charge parameterGo
  • Added the climatic category to the Insulation Specifications tableGo
  • Changed the CSA status from planned to certifiedGo
  • Added text ", but connecting CLAMP output of the gate driver to the IGBT gate is also not an issue." to Supply and Active Miller ClampGo
  • Changed the second paragraph of the Typical ApplicationsGo
  • Added text "and RST input signal" to the Design RequirementsGo
  • Changed the Electrostatic Discharge CautionGo

Changes from * Revision (July 2015) to A Revision

  • Moved Features: "100-kV/μs Minimum Common-Mode Transient Immunity.." to the top of the list Go
  • Changed from a 1-page Product Preview to the full datasheet. Go
  • Changed text "single 3-V To: 5.5-V supply" to "single 2.25-V to 5.5-V supply" in the DescriptionGo
  • Changed text "IGBT is in an overload condition" To: "IGBT is in an overcurrent condition" in the DescriptionGo
  • Changed text "and reduces the voltage at OUTL over a minimum time span of 2 μs" To: "and pulls OUTL to low over a time span of 2 μs" in the DescriptionGo
  • Changed the Functional Block Diagram, added STO on pin OUTLGo
  • Changed paragraph 3 of the DescriptionGo
  • Changed the minimum air gap (clearance) parameter to the external clearance parameterGo