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Product details

Parameters

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 5 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Enable/disable function Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 2.25 Input VCC (Max) (V) 5.5 Prop delay (ns) 76 Operating temperature range (C) -40 to 125 open-in-new Find other Isolated gate drivers

Package | Pins | Size

SOIC (DW) 16 77 mm² 10.3 x 7.5 open-in-new Find other Isolated gate drivers

Features

  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

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Description

The ISO5852S device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.
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Technical documentation

= Top documentation for this product selected by TI
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Type Title Date
* Datasheet ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. B) Jan. 16, 2017
More literature TUV certificate for isolation devices (Rev. I) Mar. 14, 2020
Application notes External Gate Resistor Selection Guide (Rev. A) Feb. 28, 2020
Application notes Understanding Peak IOH and IOL Currents (Rev. A) Feb. 28, 2020
Application notes Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting Feb. 26, 2020
More literature CSA Certification (Rev. P) Nov. 19, 2019
More literature VDE certificate for reinforced isolation for DIN VDE V 0884-11:2017-01 (Rev. N) Nov. 13, 2019
White papers Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) Sep. 19, 2019
More literature CQC Certification (Rev. F) Sep. 13, 2019
Technical articles Designing highly efficient, powerful and fast EV charging stations Aug. 06, 2019
More literature UL Certification (Rev. N) Jul. 30, 2019
Technical articles How to achieve higher system robustness in DC drives, part 3: minimum input pulse Sep. 19, 2018
Application notes Pushing the envelope with high-performance digital-isolation technology (Rev. A) Aug. 22, 2018
Application notes Digital Isolator Design Guide (Rev. B) Aug. 01, 2018
Technical articles How to achieve higher system robustness in DC drives, part 2: interlock and deadtime May 30, 2018
Technical articles Boosting efficiency for your solar inverter designs May 24, 2018
User guides ISO5852SDW Driving and Protecting SiC and IGBT Power Modules May 24, 2018
White papers Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) May 18, 2018
Application notes Isolation Glossary (Rev. A) Sep. 19, 2017
Application notes 4Q 2015 Analog Applications Journal Oct. 30, 2015
Application notes Common-mode transient immunity for isolated gate drivers Oct. 30, 2015
Application notes Pushing the envelope with high-performance digital-isolation technology Oct. 30, 2015
User guides ISO5852S Evaluation Module User's Guide (Rev. A) Sep. 08, 2015
White papers Understanding electromagnetic compliance tests in digital isolators Oct. 17, 2014
White papers High-voltage reinforced isolation: Definitions and test methodologies Oct. 16, 2014
Application notes Shelf-Life Evaluation of Lead-Free Component Finishes May 24, 2004

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
149
Description

The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in (...)

Features
  • 20-A peak, split output drive current with programmable drive voltages
  • Two 5-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection with soft turn OFF and 2-A Miller clamp ability
  • Robust noise-immune solution with CMTI > 100 V/ns
  • Isolated module temperature and (...)
EVALUATION BOARDS Download
document-generic User guide
49
Description

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

Features

Reinforced isolated IGBT gate driver with 2.5-A source and 5-A sink currents. The short propagation time assures accurate control of the output stage.

The input side operates from a single 2.25-V to 5.5-V supply. he output side allows for a supply range from minimum 15-V to maximum 30-V

2-A Miller (...)

Design tools & simulation

SIMULATION MODELS Download
SLLM283.ZIP (33 KB) - IBIS Model
SIMULATION MODELS Download
SLLM300.ZIP (91 KB) - PSpice Model
SIMULATION MODELS Download
SLLM435.ZIP (31 KB) - TINA-TI Spice Model
SIMULATION MODELS Download
SLLM436.TSC (1537 KB) - TINA-TI Reference Design
SIMULATION MODELS Download
SLLM446.ZIP (4 KB) - PSpice Model
SIMULATION TOOLS Download
PSpice® for TI design and simulation tool
PSPICE-FOR-TI — PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Features
  • Leverages Cadence PSpice Technology
  • Preinstalled library with a suite of digital models to enable worst-case timing analysis
  • Dynamic updates ensure you have access to most current device models
  • Optimized for simulation speed without loss of accuracy
  • Supports simultaneous analysis of multiple products
  • (...)
DESIGN TOOLS Download
SLLR117.ZIP (7300 KB)

Reference designs

REFERENCE DESIGNS Download
10kW 3-phase 3-level T-type inverter reference design for solar string inverter
TIDA-01606 — This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Three-level, three-phase SiC AC-to-DC converter reference design
TIDA-010039 This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bi-directional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Redundant dual-channel safe torque off (STO) reference design for AC inverters and servo drives
TIDA-01599 — This reference design implements safe torque off functionality in variable speed drives (per IEC61800-5-2) by using dual channel isolated STO signals to control the inverter that supplies power to the motor. This is accomplished by independently enabling/disabling power to the isolated gate driver (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Isolated IGBT Gate Driver Evaluation Platform for 3-Phase Inverter System Reference Design
TIDA-00195 The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules of (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Gate Driver Reference Design for Parallel IGBTs With Short-Circuit Protection and Current Buffer
TIDA-00917 — Paralleling IGBT’s becomes necessary for power conversion equipments with higher output power ratings, where single IGBT cannot provide the required load current. This TI design implements a reinforced isolated IGBT gate control module to drive  parallel IGBTs in Half bridge (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
SOIC (DW) 16 View options

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