4.5-V to 65-V input, compact bias supply with power stage reference design for IGBT/SiC gate drivers
TIDA-020015
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
See the Important Notice and Disclaimer covering reference designs and other TI resources.
Key Document
- 4.5-V to 65-V Input, Compact Bias Supply W/ Power Stage Ref. Des. for IGBT/SiC
(PDF 3063 KB)
03 Apr 2019
Description
This reference design is a 4.2-W, single-channel, automotive 12-V battery input flyback bias supply for IGBT/SiC isolated gate drivers. The supply accepts a wide input range of 4.5-V to 65-V DC. The output is configurable as +15 V,–8 V or +20 V, –4 V at loads up to 180 mA for driving the IGBT/SiC MOSFET power modules. The system consists of reverse polarity protection, electric transients clamping, and overvoltage and undervoltage protection circuits. The flyback controller implements primary-side regulation with better than ±1% load and line regulation performance. The power stage design includes the dual-channel isolated gate drivers with 5.7-kVRMS reinforced isolation and designed in compact form factor of 100 mm × 62 mm. It includes isolated DC bus sensing, isolated temp sensing, logic shoot-through protection and diagnostic features.
Features
- Wide-VIN flyback converter over the input voltage of 4.5-V to 65-V DC
- Protection for clamping high voltage conducted transients to safe levels for downstream circuitry
- Programmable overvoltage and undervoltage protection on supply output
- Primary side regulation with no optocoupler for extended life time and small form factor
- Power stage design includes dual channel isolated gate driver, DC bus sensing, and temp sensing for high voltage testing
See the Important Notice and Disclaimer covering reference designs and other TI resources.
