TIDA-01605

Automotive Dual Channel SiC MOSFET Gate Driver Reference Design with Two Level Turn-off Protection

TIDA-01605

Design files

Overview

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output voltage and 1W output power. The gate driver is capable of delivering 4A source and 6A sink peak current. It implements reinforced isolation and can withstand 8kV Peak and 5.7kV RMS isolation voltage and >100V/ns common mode transient immunity (CMTI). The reference design contains the two-level turn-off circuit which protects the MOSFET from voltage overshoot during the short circuit scenario. The DESAT detection threshold and the delay time for second stage turn-off are configurable. The ISO7721-Q1 digital isolator is implemented for interfacing the signals of fault and reset. All designed on a two layer PCB board with a compact form factor of 40mm × 40mm.

Features
  • Compact, dual-channel, gate-driver solution for driving SiC MOSFETs in half bridge configuration
  • 4-A source and 6-V sink peak current driving capability suitable for driving SiC MOSFET, Si MOSFET, and IGBT with switching frequency up to 500 kHz
  • Built-in, compact, high-efficiency, isolated-bias supply, with 15V and –4V outputs
  • Discrete, two-level turn-off for short-circuit protection, with adjustable current limit and delay (blanking) time
  • Provides high CMTI of > 100 V/ns and reinforced isolation of 8-kV peak and 5.7-kV RMS voltages

A fully assembled board has been developed for testing and performance validation only, and is not available for sale.

Design files & products

Design files

Download ready-to-use system files to speed your design process.

TIDUE55B.PDF (5380 K)

Reference design overview and verified performance test data

TIDRVT3A.PDF (214 K)

Detailed schematic diagram for design layout and components

TIDRVT4A.PDF (55 K)

Complete listing of design components, reference designators, and manufacturers/part numbers

TIDRVT5A.PDF (1731 K)

Detailed overview of design layout for component placement

TIDRVT7A.ZIP (789 K)

Files used for 3D models or 2D drawings of IC components

TIDCEJ7A.ZIP (295 K)

Design file that contains information on physical board layer of design PCB

TIDRVT6A.PDF (6671 K)

PCB layer plot file used for generating PCB design layout

Products

Includes TI products in the design and potential alternatives.

Comparators

LMV762Q-Q1Low Voltage, Precision Comparator with Push-Pull Output

Data sheet document-pdfAcrobat PDF open-in-new HTML
Digital isolators

ISO7721-Q1Automotive, robust EMC, dual-channel, 1/1, reinforced digital isolator

Data sheet document-pdfAcrobat PDF
Isolated gate drivers

UCC21530-Q1Automotive 5.7kVrms, 4A/6A dual-channel isolated gate driver w/ EN & DT pins in DWK pkg for I

Data sheet document-pdfAcrobat PDF open-in-new HTML
Linear & low-dropout (LDO) regulators

TPS7B69-Q1Automotive 150-mA, off-battery (40-V), high-PSRR, low-IQ, low-dropout voltage regulator

Data sheet document-pdfAcrobat PDF open-in-new HTML
N-channel MOSFETs

CSD17313Q230-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm

Data sheet document-pdfAcrobat PDF open-in-new HTML
Shunt voltage references

TL431-Q1Automotive adjustable precision shunt regulator (pin layout: KRA)

Data sheet document-pdfAcrobat PDF open-in-new HTML
Transformer drivers

SN6501-Q1Automotive low-noise, 350-mA, 410-kHz transformer driver for isolated power supplies

Data sheet document-pdfAcrobat PDF open-in-new HTML

Technical documentation

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Type Title Date
* Design guide Automotive Dual-Channel, SiC MOSFET Gate Driver Reference Design (Rev. B) Jun. 03, 2020
Technical article TI empowers design engineers at APEC Feb. 16, 2018
White paper High-voltage reinforced isolation: Definitions and test methodologies Oct. 16, 2014

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