This reference design functions from a base of silicon carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V input voltage and 6.6-kW full power. The C2000 controller enables phase shedding and adaptive dead-time control to improve the power factor at light load. The gate driver board (see TIDA-01605) is capable of delivering a 4-A source and 6-A sink peak current. The gate driver board implements a reinforced isolation and can withstand more than 100-V/ns common-mode transient immunity (CMTI). The gate driver board also contains the two-level turnoff circuit, which protects the MOSFET from voltage overshoot during the short-circuit scenario.
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Reference design overview and verified performance test data
Detailed schematic diagram for design layout and components
Complete listing of design components, reference designators, and manufacturers/part numbers
Detailed overview of design layout for component placement
Files used for 3D models or 2D drawings of IC components
Design file that contains information on physical board layer of design PCB
PCB layer plot file used for generating PCB design layout
Includes TI products in the design and potential alternatives.
| Type | Title | Date | |
|---|---|---|---|
| * | Design guide | 98.6% Efficiency, 6.6-kW Totem-Pole PFC Ref Design for HEV/EV Onboard Charger (Rev. B) | Apr. 08, 2020 |
| White paper | Taking charge of electric vehicles – both in the vehicle and on the grid (Rev. A) | Jun. 17, 2020 | |
| White paper | Breakthrough technologies lead the solar power industry into the future | Jul. 27, 2018 | |
| Analog design journal | Control challenges in a totem-pole PFC | Apr. 26, 2017 |
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