UCC5870QEVM-045

UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver three-phase EVM

UCC5870QEVM-045

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Overview

The UCC5870-Q1 three-phase evaluation module (EVM) is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection features. This EVM is targeted to drive high-power SiC MOSFETs and IGBTs in EV/HEV applications. This three-phase EVM can be used for debugging software for the driver's serial peripheral interface (SPI) and exploring the driver's sophisticated diagnostic, protection, and monitoring features.

Features
  • Supports three-phase application software development
  • SPI-based device reconfiguration, verification, supervision, and diagnosis
  • Supports both address-mode SPI and daisy-chain mode SPI
  • Power transistor protections: DESAT, OC/SC, Programmable soft turn off (STO) and two-level turn off (2LTOFF) during power transistor faults
  • Split driver outputs guarantee 15-A peak source and 15-A peak sink currents
Isolated gate drivers
UCC5870-Q1 Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC UCC5871-Q1 Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features

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Evaluation board

UCC5870QEVM-045 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver three-phase evaluation module

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Support software

UCC5870QEVM-045 Sample Code Software — SLUC707.ZIP (3646KB)

TI's Standard Terms and Conditions for Evaluation Items apply.

Design files

Technical documentation

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Type Title Date
* EVM User's guide UCC5870-Q1EVM-045 User's Guide PDF | HTML Feb. 04, 2020
Data sheet UCC5870-Q1 Isolated IGBT, SiC MOSFET Gate Driver With Real-Time datasheet (Rev. C) Sep. 01, 2021
Certificate UCC5870QEVM-045 EU Declaration of Conformity (DoC) Feb. 22, 2021

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