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UCC5871-Q1

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Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features

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Data sheet

UCC5871-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input VCC (min) (V) 3.3 Input VCC (max) (V) 5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input VCC (min) (V) 3.3 Input VCC (max) (V) 5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
SSOP (DWJ) 36 131.84 mm² 12.8 x 10.3
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000 V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000 V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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Technical documentation

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Type Title Date
* Data sheet UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications datasheet PDF | HTML 02 Dec 2022
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 Feb 2023
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 27 Sep 2022
White paper 최적의성능을 갖춘 EV 트랙션 인버터에서 설계 우선 순위 PDF | HTML 27 Sep 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 Sep 2022
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 17 Aug 2022
White paper 트랙션 인버터 – 차량 전기화를 이끄는 동력 PDF | HTML 17 Aug 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters 10 Jun 2022
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC5870QDWJEVM-026 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver evaluation module

The UCC5870-Q1 evaluation module is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection functions UCC5870-Q1. This drive is targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Protection functions such as the active Miller clamp, (...)
User guide: PDF
Not available on TI.com
Evaluation board

UCC5870QEVM-045 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver three-phase EVM

The UCC5870-Q1 three-phase evaluation module (EVM) is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection features. This EVM is targeted to drive high-power SiC MOSFETs and IGBTs in EV/HEV applications. This three-phase EVM can be used for debugging (...)

User guide: PDF | HTML
Not available on TI.com
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDM-02009 — ASIL D safety concept-assessed high-speed traction, bi-directional DC/DC conversion reference design

This reference design demonstrates control of HEV/EV traction inverter and bi-directional DC-DC converter by a single TMS320F28388D real-time C2000™ MCU. The traction control uses a software-based resolver to digital converter (RDC) driving the motor to a high speed up to 20,000 RPM. The (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP22817 — Automotive SPI-programmable gate driver and bias supply with integrated transformer reference design

This reference design provides isolated-bias supply and isolated-gate driver for power switches in traction inverters and onboard chargers. Both the bias power and driver provide the high isolation (3-kV RMS for one minute) needed for 800-VDC bus application. The isolated bias provides 24 VDC both (...)
Test report: PDF
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