Product details

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 working voltage (Vpk) 1500 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3.3 Input VCC (Max) (V) 5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125
Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 working voltage (Vpk) 1500 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3.3 Input VCC (Max) (V) 5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125
SSOP (DWJ) 36
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 5700– VRMS isolation for 1 minute per UL1577 (planned)
    • Reinforced isolation 8kV per VDE0884-11 (planned)
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 5700– VRMS isolation for 1 minute per UL1577 (planned)
    • Reinforced isolation 8kV per VDE0884-11 (planned)

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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Technical documentation

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Type Title Date
* Data sheet UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications datasheet PDF | HTML 19 Mar 2021
Technical article Reducing power loss and thermal dissipation in SiC traction inverters 10 Jun 2022
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

Design & development

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Evaluation board

UCC5870QDWJEVM-026 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver evaluation module

The UCC5870-Q1 evaluation module is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection functions UCC5870-Q1. This drive is targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Protection functions such as the active Miller clamp, (...)
Not available on TI.com
Evaluation board

UCC5870QEVM-045 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver three-phase EVM

The UCC5870-Q1 three-phase evaluation module (EVM) is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection features. This EVM is targeted to drive high-power SiC MOSFETs and IGBTs in EV/HEV applications. This three-phase EVM can be used for debugging (...)

Not available on TI.com
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PSPICE-FOR-TI PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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