Cree/Wolfspeed SiC MOSFET reference designs
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Cree|Wolfspeed is a global leader in wide bandgap semiconductor technology. Wolfspeed’s silicon carbide products offers the industry’s lowest on-state resistances as well as low switching losses, enabling high efficiency and power density. Wolfspeed SiC devices far outperform conventional silicon components and set new standards for efficiency and reliability in industrial, energy, automotive, and consumer markets.
Cree|Wolfspeed combines its leading edge SiC MOSFET’s and module technology with TI’s C2000(TM) real-time microcontrollers, analog power and signal chain products to create unparalleled system solutions. For joint applications support with reference designs visit TI’s E2E forum or ask a Wolfspeed SiC expert.
Cree|Wolfspeed offers time-saving reference designs for some of the most in-demand silicon carbide devices in power systems – inverters, power converters, chargers and many more. These reference designs come complete with application notes, user guides and design files to allow designers to create rugged and reliable systems with best-in-class power density, performance and efficiency.
Cree|Wolfspeed MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers. Cree|Wolfspeed SiC MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.
Cree|Wolfspeed is able to offer the benefits of vertical integration from SiC material to package, enabling them to provide leading SiC technology throughout the supply chain. The goal of Cree|Wolfspeed power modules is to meet each customer's system design requirements with a package that offers best-in-class SiC performance. Cree|Wolfspeed offers two distinct product categories to serve different customer value propositions: industry-standard footprints and optimized footprints.