SLUSF77 December   2023 BQ25960H

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Description (continued)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charging System
      2. 8.3.2  Battery Charging Profile
      3. 8.3.3  Device Power Up
      4. 8.3.4  Device HIZ State
      5. 8.3.5  Dual Input Bi-Directional Power Path Management
        1. 8.3.5.1 ACDRV Turn-On Condition
        2. 8.3.5.2 Single Input from VAC to VBUS without ACFET-RBFET
        3. 8.3.5.3 Single Input with ACFET1
        4. 8.3.5.4 Dual Input with ACFET1-RBFET1
        5. 8.3.5.5 Dual Input with ACFET1-RBFET1 and ACFET2-RBFET2
        6. 8.3.5.6 OTG and Reverse TX Mode Operation
      6. 8.3.6  Bypass Mode Operation
      7. 8.3.7  Charging Start-Up
      8. 8.3.8  Adapter Removal
      9. 8.3.9  Integrated 16-Bit ADC for Monitoring and Smart Adapter Feedback
      10. 8.3.10 Device Modes and Protection Status
        1. 8.3.10.1 Input Overvoltage, Overcurrent, Undercurrent, Reverse-Current and Short-Circuit Protection
        2. 8.3.10.2 Battery Overvoltage and Overcurrent Protection
        3. 8.3.10.3 IC Internal Thermal Shutdown, TSBUS, and TSBAT Temperature Monitoring
      11. 8.3.11 INT Pin, STAT, FLAG, and MASK Registers
      12. 8.3.12 Dual Charger Operation Using Primary and Secondary Modes
      13. 8.3.13 CDRVH and CDRVL_ADDRMS Functions
    4. 8.4 Programming
      1. 8.4.1 F/S Mode Protocol
    5. 8.5 Register Maps
      1. 8.5.1 I2C Registers
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Standalone Application Information (for use with main charger)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information
    1. 14.1 Package Option Addendum
    2. 14.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

Dual Input Bi-Directional Power Path Management

The device has two ACDRV pins to drive two sets of N-channel ACFET-RBFET, which select and manage the input power from two different input sources. A single GaN FET can be used to replace an ACFET-RBFET combination and will be treated the same as an ACFET-RBFET combination. In the POR sequence, the device detects if the protection FET(s) are populated based on if ACDRV pin is shorted to ground or not, and then updates the status register ACRB1_CONFIG_STAT or ACRB2_CONFIG_STAT to indicate the presence of AC protection FETs. If the external ACFET-RBFET or GaN FET is not populated in the schematic, then tie VAC to VBUS and connect ACDRV to GND. The device supports:

  1. single input without external FET
  2. single input with one single ACFET
  3. dual input with one set of ACFET-RBFET
  4. dual input with two sets of ACFET-RBFET

The power-up sequences for different applications are described in detail below.