SLLS236I October   1996  – June 2015 SN65LBC184 , SN75LBC184

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Driver
    6. 6.6  Electrical Characteristics: Receiver
    7. 6.7  Driver Switching Characteristics
    8. 6.8  Receiver Switching Characteristics
    9. 6.9  Dissipation Ratings
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 SN65LBC184 Test Description
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage(2) –0.5 7 V
Continuous voltage range at any bus terminal –15 15 V
Data input/output voltage –0.3 7 V
IO Receiver output current –20 20 mA
Continuous total power dissipation(3) Internally Limited
Tstg Storage temperature 160 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential input/output bus voltage, are with respect to network ground terminal.
(3) The driver shuts down at a junction temperature of approximately 160°C. To operate below this temperature, see the Dissipation Ratings.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) A, B, GND ±15000 V
All pins ±3000
Contact discharge (IEC61000-4-2) A, B, GND(2) ±30000
Air discharge (IEC61000-4-2) A, B, GND(3) ±15000
All pins (Class 3A) ±8000
All pins (Class 3B) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) GND and bus pin ESD protection is beyond readily available test equipment capabilities for IEC 61000-4-2, EIA/JEDEC test method A114-A and MIL-STD-883C method 3015. Ratings listed are limits of test equipment; device performance exceeds these limits.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN(1) TYP MAX UNIT
VCC Supply voltage 4.75 5 5.25 V
VI or VIC Voltage at any bus terminal (separately or common mode) –7 12 V
VIH High-level input voltage D, DE, and RE 2 V
VIL Low-level input voltage D, DE, and RE 0.8 V
|VID| Differential input voltage 12 V
IOH High-level output current Driver –60 mA
Receiver –8
IOL Low-level output current Driver 60 mA
Receiver 4
TA Operating free-air temperature SN75LBC184 0 70 °C
SN65LBC184 –40 85
(1) The algebraic convention, in which the less-positive (more-negative) limit is designated minimum, is used in this data sheet.

6.4 Thermal Information

THERMAL METRIC(1) SNx5LBC184 UNIT
P [PDIP] D [SOIC]
8 PINS
RθJA Junction-to-ambient thermal resistance 108.7 172.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.8 42.5 °C/W
RθJB Junction-to-board thermal resistance 23.6 41.4 °C/W
ψJT Junction-to-top characterization parameter 12 4.6 °C/W
ψJB Junction-to-board characterization parameter 23.5 40.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: Driver

over recommended operating conditions (unless otherwise noted)
PARAMETER ALTERNATE SYMBOLS TEST CONDITIONS MIN TYP(1) MAX UNIT
ICC Supply current NA DE = RE = 5 V No Load 12 25 mA
DE = 0 V
RE = 5 V		 No Load
 175 300 μA
IIH High-level input current (D, DE, RE) NA VI = 2.4 V 50 μA
IIL Low-level input current (D, DE, RE) NA VI = 0.4 V –50 μA
IOS Short-circuit output current OS(2) NA VO = –7 V –250 –120 mA
VO = VCC 250
VO = 12 V 250
IOZ High-impedance output current NA See Receiver II mA
VO Output voltage Voa, Vob IO = 0 0 VCC V
VOC(PP) Peak-to-peak change in common-mode output voltage during state transitions NA See Figure 9 and Figure 10 0.8 V
VOC Common-mode output voltage |Vos| See Figure 8 1 3 V
|ΔVOC(SS)| Magnitude of change, common-mode steady-state output voltage |Vos – Vos| See Figure 10 0.1 V
|VOD| Magnitude of differential output voltage |VA – VB| Vo IO = 0 1.5 6 V
RL = 54 Ω, See Figure 8 1.5 V
Δ|VOD| Change in differential voltage magnitude between logic states ||Vt| – |Vt|| RL = 54 Ω 0.1 V
(1) All typical values are measured with TA = 25°C and VCC = 5 V.
(2) This parameter is measured with only one output being driven at a time.

6.6 Electrical Characteristics: Receiver

over recommended operation conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
ICC Supply current (total package) DE = RE = 0 V, No Load 3.9 mA
RE = 5 V, DE = 0 V, No Load 300 μA
II Input current Other input = 0 V VI = 12 V 250 μA
VI = 12 V, VCC = 0 250
VI = –7 V –200
VI = –7 V, VCC = 0 –200
IOZ High-impedance-state output current VO = 0.4 V to 2.4 V ±100 μA
Vhys Input hysteresis voltage 70 mV
VIT+ Positive-going input threshold voltage 200 V
VIT– Negative-going input threshold voltage –200 mV
VOH High-level output voltage IOH = –8 mA, See Figure 11 2.8 V
VOL Low-level output voltage IOL = 4 mA, See Figure 11 0.4 V
(1) All typical values are at VCC = 5 V, TA = 25°C.

6.7 Driver Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
td(DH) Differential output delay time, low-to-high-level output RL = 54 Ω
CL = 50 pF		 See Figure 9 1.3 μs
td(DL) Differential output delay time, high-to-low-level output 1.3 μs
tPLH Propagation delay time, low-to-high-level output 0.5 1.3 μs
tPHL Propagation delay time, high-to-low-level output 0.5 1.3 μs
tsk(p) Pulse skew (| td(DH) – td(DL)|) 75 150 ns
tr Rise time, single-ended 0.25 1.2 μs
tf Fall time, single-ended 0.25 1.2 μs
tPZH Output enable time to high level RL = 110 Ω See Figure 6 3.5 μs
tPZL Output enable time to low level RL = 110 Ω See Figure 7 3.5 μs
tPHZ Output disable time from high level RL = 110 Ω See Figure 6 2 μs
tPLZ Output disable time from low level RL = 110 Ω See Figure 7 2 μs

6.8 Receiver Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH Propagation delay time, low-to-high-level output CL = 50 pF, See Figure 11 150 ns
tPHL Propagation delay time, high-to-low-level output 150 ns
tsk(p) Pulse skew (|tPHL– tPLH|) 50 ns
tr Rise time, single-ended See Figure 11 20 ns
tf Fall time, single-ended 20 ns
tPZH Output enable time to high level See Figure 12 100 ns
tPZL Output enable time to low level 100 ns
tPHZ Output disable time from high level 100 ns
tPLZ Output disable time from low level 100 ns

6.9 Dissipation Ratings

PACKAGE TA ≤ 25°C
POWER RATING		 DERATING FACTOR
ABOVE TA = 25°C		 TA = 70°C
POWER RATING		 TA = 85°C
POWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW
P 1150 mW 9.2 mW/°C 736 mW 598 mW

6.10 Typical Characteristics

SN65LBC184 SN75LBC184 vod_ta_lls236.gifFigure 1. Driver Differential Output Voltage vs Free-Air Temperature
SN65LBC184 SN75LBC184 tt_ta_lls236.gifFigure 3. Driver Transition Time vs Free-Air Temperature
SN65LBC184 SN75LBC184 ii_vi_lls236.gifFigure 5. Receiver Input Current vs Input Voltage
SN65LBC184 SN75LBC184 tpd_ta_lls236.gifFigure 2. Driver Propagation Delay Time vs Free-Air Temperature
SN65LBC184 SN75LBC184 vod_io_lls236.gifFigure 4. Differential Output Voltage vs Output Current