SLVS736C February   2008  – October 2023 TPS2550 , TPS2551

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Overcurrent
      2. 9.3.2 Reverse-Voltage Protection
      3. 9.3.3 FAULT Response
      4. 9.3.4 Undervoltage Lockout (UVLO)
      5. 9.3.5 ENABLE ( EN or EN)
      6. 9.3.6 Thermal Sense
      7. 9.3.7 Device Functional Modes
    4. 9.4 Programming
      1. 9.4.1 Programming the Current-Limit Threshold
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Two-Level Current-Limit Circuit
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detail Design Procedures
        1. 10.2.3.1 Designing Above a Minimum Current Limit
        2. 10.2.3.2 Designing Below a Maximum Current Limit
        3. 10.2.3.3 Input and Output Capacitance
      4. 10.2.4 Auto-Retry Functionality
      5. 10.2.5 Latch-Off Functionality
      6. 10.2.6 Typical Application as USB Power Switch
        1. 10.2.6.1 Design Requirements
          1. 10.2.6.1.1 USB Power-Distribution Requirements
        2. 10.2.6.2 Detail Design Procedures
          1. 10.2.6.2.1 Universal Serial Bus (USB) Power-Distribution Requirements
    3. 10.3 Power Supply Recommendations
      1. 10.3.1 Self-Powered and Bus-Powered Hubs
      2. 10.3.2 Low-Power Bus-Powered and High-Power Bus-Powered Functions
      3. 10.3.3 Power Dissipation and Junction Temperature
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

over recommended operating junction temperature range, 2.5 V ≤ VIN ≤ 6.5 V, RILIM = 14.3 kΩ, V/EN = 0 V, or VEN = 5.0 V (unless otherwise noted)
PARAMETERTEST CONDITIONS(1)MINTYPMAXUNIT
POWER SWITCH
rDS(on)Static drain-source on-state resistanceDBV package, TJ = 25 °C94100mΩ
DBV package, –40 °C ≤TJ ≤125 °C140
DRV package, TJ = 25 °C100115
DRV package, –40 °C ≤TJ ≤105 °C145
DRV package, –40 °C ≤TJ ≤125 °C150
trRise time, outputVIN = 6.5 VCL = 1 μF, RL = 100 Ω,
(see Figure 8-1)		1.01.5ms
VIN = 2.5 V0.651.0
tfFall time, outputVIN = 6.5 V0.20.5
VIN = 2.5 V0.20.5
ENABLE INPUT EN OR EN
VIHHigh-level input voltage1.1V
VILLow-level input voltage0.66
IENInput currentVEN = 0 V or 6.5 V, V/EN = 0 V or 6.5 V–0.50.5μA
tonTurnon timeCL = 1 μF, RL = 100 Ω, (see Figure 8-1)3ms
toffTurnoff time3ms
CURRENT LIMIT
IOSShort-circuit current, OUT connected to GNDRILIM = 80.6 kΩ160265350mA
RILIM = 38.3 kΩ350550700
RILIM = 15 kΩ110014501700
IOCCurrent-limit threshold (Maximum DC output current IOUT delivered to load)RILIM = 80.6 kΩ340365390
RILIM = 38.3 kΩ670715755
RILIM = 15 kΩ160017001800
tIOSResponse time to short circuitVIN = 5.0 V (see Figure 8-2)2μs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
(VOUT – VIN)		95135190mV
Time from reverse-voltage condition to MOSFET turn offVIN = 5.0 V357ms
SUPPLY CURRENT
IIN_offSupply current, low-level outputVIN = 6.5 V, No load on OUT, V EN = 6.5 V or VEN = 0 V, 14.3 kΩ ≤ RILIM ≤ 80.6 kΩ0.11μA
IIN_onSupply current, high-level outputVIN = 6.5 V, No load on OUT, V EN = 0 V or VEN = 6.5 VRILIM = 15 kΩ150μA
RILIM = 80.6 kΩ130μA
IREVReverse leakage currentVOUT = 6.5 V, VIN = 0 VTJ = 25 °C0.011μA
UNDERVOLTAGE LOCKOUT
VUVLOLow-level input voltage, INVIN rising2.352.45V
Hysteresis, INTJ = 25 °C25mV
FAULT FLAG
VOLOutput low voltage, FAULTI/FAULT = 1 mA180mV
Off-state leakageV/FAULT = 6.5 V1μA
FAULT deglitchFAULT assertion or de-assertion due to overcurrent condition57.510ms
FAULT assertion or de-assertion due to reverse-voltage condition246ms
THERMAL SHUTDOWN
Thermal shutdown threshold155°C
Thermal shutdown threshold in current-limit135°C
Hysteresis15°C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.