SLVSCJ5B December   2015  – June 2020 TPS7H3301-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Standard DDR Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VTT/VO Sink and Source Regulator
      2. 7.3.2 Reference Input (VDDQSNS)
      3. 7.3.3 Reference Output (VTTREF)
      4. 7.3.4 EN Control (EN)
      5. 7.3.5 Power-Good Function (PGOOD)
      6. 7.3.6 VTT Current Protection
      7. 7.3.7 VIN UVLO Protection
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD/VIN Capacitor
        2. 8.2.2.2 VLDO Input Capacitor
        3. 8.2.2.3 VTT Output Capacitor
        4. 8.2.2.4 VTTSNS Connection
        5. 8.2.2.5 Low VIN Applications
        6. 8.2.2.6 S3 and Pseudo-S5 Support
        7. 8.2.2.7 Tracking Startup and Shutdown
        8. 8.2.2.8 Output Tolerance Consideration for VTT DIMM or Module Applications
        9. 8.2.2.9 LDO Design Guidelines
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.9 LDO Design Guidelines

The minimum input (VLDOIN) to output voltage (VTT/VO) difference (headroom) decides the lowest usable supply voltage Gm-driven to drive a certain load. For TPS7H3301-SP, a minimum of 300 mV (VLDOINMIN – VTT/VOMAX) is needed in order to support a Gm driven sourcing current of 3 A based on a design of VLDOIN = 3.3 V and COUT = 470 μF. Because the TPS7H3301-SP is essentially a Gm-driven LDO, its impedance characteristics are both a function of the 1/Gm and RDS(on) of the sourcing MOSFET (see Figure 22). The current inflection point of the design is between 3 A and 4 A. When ISRC is less than the inflection point, the LDO is considered to be operating in the Gm region; when ISRC is greater than the inflection point but less than the overcurrent limit point, the LDO is operating in the RDS(on) region. The typical sourcing RDS(on) is 154 mΩ with V IN = 3 V and TJ = 125°C.

TPS7H3301-SP imp_char_slvscj5.gifFigure 22. TPS7H3301-SP Impedance Characteristics