JAJSF40 March   2018 CSD86356Q5D

PRODUCTION DATA.  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
    1.     上面図
      1.      Device Images
  4. 4改訂履歴
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics – Q1 Control FET
    6. 5.6 Electrical Characteristics – Q2 Sync FET
    7. 5.7 Typical Power Block Device Characteristics
    8. 5.8 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
        1. 6.1.1.1 Comparison of RDS(ON) vs ZDS(ON)
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
      2. 6.2.2 Operating Conditions
        1. 6.2.2.1 Calculating Power Loss
        2. 6.2.2.2 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Recommended Schematic Overview
    2. 7.2 Recommended PCB Design Overview
      1. 7.2.1 Electrical Performance
      2. 7.2.2 Thermal Performance
  8. 8デバイスおよびドキュメントのサポート
    1. 8.1 ドキュメントの更新通知を受け取る方法
    2. 8.2 コミュニティ・リソース
    3. 8.3 商標
    4. 8.4 静電気放電に関する注意事項
    5. 8.5 Glossary
  9. 9メカニカル、パッケージ、および注文情報
    1. 9.1 Q5Dパッケージの寸法
    2. 9.2 ピン構成
    3. 9.3 推奨ランド・パターン
    4. 9.4 推奨ステンシル

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.1.2 Power Loss Curves

MOSFET centric parameters such as RDS(ON) and Qgd are needed to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 1 plots the power loss of the CSD86356Q5D as a function of load current. This curve is measured by configuring and running the CSD86356Q5D as it would be in the final application (see Figure 30).The measured power loss is the CSD86356Q5D loss and consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.

Equation 1. (VIN × IIN) + (VDD × IDD) – (VSW_AVG × IOUT) = Power loss

The power loss curve in Figure 1 is measured at the maximum recommended junction temperatures of 125°C under isothermal test conditions.