TIDUF28 November   2023

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1 LMG3422R030
      2. 2.2.2 ISO7741
      3. 2.2.3 AMC1306M05
      4. 2.2.4 AMC1035
      5. 2.2.5 TPSM560R6H
      6. 2.2.6 TPSM82903
  9. 3System Design Theory
    1. 3.1 Power Switches
      1. 3.1.1 GaN-FET Selection Criterion
      2. 3.1.2 HVBUS Decoupling and 12-V Bootstrap Supply
      3. 3.1.3 GaN_FET Turn-on Slew Rate Configuration
      4. 3.1.4 PWM Input Filter and Dead-Time Calculation
      5. 3.1.5 Signal Level Shifting
      6. 3.1.6 LMG3422R030 Fault Reporting
      7. 3.1.7 LMG3422R030 Temperature Monitoring
    2. 3.2 Phase Current Sensing
      1. 3.2.1 Shunt
      2. 3.2.2 AMC1306M05 Analog Input-Filter
      3. 3.2.3 AMC1306M05 Digital Interface
      4. 3.2.4 AMC1306M05 Supply
    3. 3.3 DC-Link (HV_BUS) Voltage Sensing
    4. 3.4 Phase Voltage Sensing
    5. 3.5 Control Supply
    6. 3.6 MCU Interface
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 PCB
      2. 4.1.2 MCU Interface
    2. 4.2 Software Requirements
    3. 4.3 Test Setup
      1. 4.3.1 Precautions
      2. 4.3.2 Test Procedure
    4. 4.4 Test Results
      1. 4.4.1 24-V Input Control Supply
      2. 4.4.2 Propagation Delay PWM to Phase Voltage Switch Node
      3. 4.4.3 Switch Node Transient at 320-VDC Bus Voltage
      4. 4.4.4 Phase Voltage Linearity and Distortion at 320 VDC and 16-kHz PWM
      5. 4.4.5 Inverter Efficiency and Thermal Characteristic
        1. 4.4.5.1 Efficiency Measurements
        2. 4.4.5.2 Thermal Analysis and SOA Without Heat Sink at 320 VDC and 16-kHz PWM
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
      3. 5.1.3 PCB Layout Recommendations
        1. 5.1.3.1 Layout Prints
      4. 5.1.4 Altium Project
      5. 5.1.5 Gerber Files
      6. 5.1.6 Assembly Drawings
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author

2.2.1 LMG3422R030

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The following key features help significantly increase power efficiency and improve system robustness for motor-integrated drive applications:

  • 600-V 30-mΩ GaN FET with integrated gate driver, fast switching and zero reverse recovery charge significantly reduce power losses versus IGBTs
  • Configurable 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
  • Advanced power management features and robust protection, such as cycle-by-cycle overcurrent and latched short circuit protection with less than 100-ns response, self-protection from internal overtemperature and UVLO monitoring and reporting
  • Real-time and accurate digital temperature PWM output helps managing the LMG3422R030 junction temperature to optimize the safe operating area (SOA)
  • Integrated 5-V low dropout (LDO) to supply digital isolators or current sensors helps reduce BOM and footprint
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • Operating junction temperature absolute maximum ratings: –40°C to 150°C
GUID-E3707422-205A-4835-9AE6-B802D49B0D8A-low.jpgFigure 2-2 LMG3422R030 Block Diagram