TIDUF28 November 2023
SUBSECTION | PARAMETER | SPECIFICATION |
---|---|---|
Input supply | DC-bus voltage | 320 V (TYP), 400 V (MAX) |
Control supply voltage | 24 V ±20% (TYP), 60 V (MAX) | |
Power switch | GaN-FET | LMG3422R030, bottom-side cooling |
Slew rate | 30 V/ns (TYP), configurable, 100 V/ns (MAX) with this design. | |
Overcurrent and overtemperature protection | LMG3422R030 integrated | |
Fault reporting | Overcurrent, overtemperature, and UVLO fault feedback | |
Temperature sensing (phase V) | Encoded: 9-kHz PWM at 3.3 V | |
3-phase complementary PWM | 8 kHz – 16 kHz (TYP), and higher, see section 3. | |
PWM dead time | 150 ns (MCU), results effective 120 ns (TYP), can be lower, see Section 3. | |
3-phase output current (no heat sink) | 7.7 ARMS (TYP) at 27°C ambient, no heat sink | |
Heat sink | None, but provision to add | |
Phase current sense | Shunt | 1-mΩ shunt, 3 W |
Isolated modulator | ±50 mV (linear input voltage range) | |
Measurement range | ±50 A (linear range) | |
DC bus voltage sense | Measurement range | 0 V to 480 V (linear range), configurable |
Phase voltage sense | Measurement range | 0 V to 480 V, configurable |
Isolation | None | MCU connected to DC–, hot side control |
MCU interface | C2000 controlCARD | 180-pin HECC (5V supply and 3.3 V I/O) |
MCU | 100-mil standard headers (3.3 V I/O) | |
PCB | Layer stack | 6 layers, 70-μm copper |
Clearance distances | 1. 6 mm (top and bottom layer), 0.6 mm (inner layers) | |
PCB size | 148 mm × 116 mm (5826 mil × 4566 mil ) |