Produktdetails

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +150°C
  • Functional Safety-Compliant targeted
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design will be available upon production release
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60-V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Charge pump to support 100% PWM duty cycle and to generate overdrive supply
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
  • Low-side Current Sense Amplifier
    • Sub-1 mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Multiple PWM interface options available
    • 6x, 3x, 1x PWM Modes
    • PWM over SPI
  • Supports 3.3-V, and 5-V Logic Inputs
  • Optional programmable OTP for reset settings
  • Advanced and configurable protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET V DS and R sense over current monitors
    • MOSFET V GS gate fault monitors
    • Internal regulator and clock monitors
    • Analog Built-In-Self-Test (ABIST)
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +150°C
  • Functional Safety-Compliant targeted
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design will be available upon production release
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60-V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Charge pump to support 100% PWM duty cycle and to generate overdrive supply
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
  • Low-side Current Sense Amplifier
    • Sub-1 mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Multiple PWM interface options available
    • 6x, 3x, 1x PWM Modes
    • PWM over SPI
  • Supports 3.3-V, and 5-V Logic Inputs
  • Optional programmable OTP for reset settings
  • Advanced and configurable protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET V DS and R sense over current monitors
    • MOSFET V GS gate fault monitors
    • Internal regulator and clock monitors
    • Analog Built-In-Self-Test (ABIST)
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV3233 is an integrated smart gate driver for 12-V and 24-V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV3233 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.

The DRV3233 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV3233 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV3233 is an integrated smart gate driver for 12-V and 24-V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV3233 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.

The DRV3233 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV3233 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

Herunterladen Video mit Transkript ansehen Video
-Familie ist weniger

Das komplette Datenblatt ist verfügbar. Jetzt anfordern

Informationen zum Evaluierungsmodul verfügbar. Jetzt anfordern

Technische Dokumentation

star =Von TI ausgewählte Top-Empfehlungen für dieses Produkt
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 2
Typ Titel Datum
* Data sheet DRV3233-Q1 Automotive 24/12-V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics datasheet PDF | HTML 21 Dez 2020
Application brief Striking a Balance: Automotive Designs for Enhanced Efficiency and EMI Control PDF | HTML 02 Okt 2023

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Gehäuse Pins Herunterladen
HTQFP (PHP) 48 Optionen anzeigen

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

Support und Schulungen

TI E2E™-Foren mit technischem Support von TI-Ingenieuren

Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.

Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support. ​​​​​​​​​​​​​​

Videos