NEU

DRV8161

VORSCHAU

Intelligenter Halbbrücken-Gate-Treiber für die Automobilindustrie, max. 105 V, mit einzelnem Stromme

Produktdetails

Rating Automotive Architecture Gate driver Vs (min) (V) 8 Features 1x low side current sense Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Vs (min) (V) 8 Features 1x low side current sense Operating temperature range (°C) -40 to 125
VSSOP (DGS) 20 24.99 mm² 5.1 x 4.9
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 400ns
  • Robust design for motor phase (SH) switching
    • Slew rate 20V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 400ns
  • Robust design for motor phase (SH) switching
    • Slew rate 20V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet PDF | HTML 06 Mai 2024
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 30 Apr 2024
EVM User's guide DRV8161 Evaluation Module User's Guide PDF | HTML 26 Apr 2024

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

DRV8161EVM — DRV8161 Evaluierungsmodul

Das Evaluierungsmodul (EVM) DRV8161 ist eine dreiphasige bürstenlose Gleichstrom-Ansteuerungsstufe 30 A mit drei DRV8161-Gate-Treibern zum Antrieb von BLDC-Motoren. Das EVM ermöglicht eine schnelle Evaluierung des DRV8161, der einen BLDC-Motor mit trapezförmiger Kommutierung antreibt.
Benutzerhandbuch: PDF | HTML
Designtool

DRV8161EVM Hardware Design Files

SLVRBO6.ZIP (13503 KB)
Gehäuse Pins Herunterladen
VSSOP (DGS) 20 Optionen anzeigen

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

Support und Schulungen

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