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Gestión de la energía
Controladores de compuertas
Drivers de compuerta aislados

UCC21530-Q1

ACTIVO

Controlador de compuerta de doble canal, aislado, 4 A, 6 A, 5.7 kVRMS para automoción con pines EN y

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NUEVO UCC21551-Q1 ACTIVO Controlador de compuerta aislado de doble canal de 4A A/6A 5kVrms A para automoción con pines Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530-Q1

ACTIVO
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Detalles del producto

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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El manual de seguridad UCC21530-Q1 y el informe de tasa de ajuste de seguridad están disponibles. Solicitar ahora

Documentación técnica

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* Data sheet UCC21530-Q1 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. D) PDF | HTML 29 abr 2021
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 ene 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 sep 2023
Certificate UCC21540 CQC Certificate of Product Certification 17 ago 2023
Certificate UCC215xx CQC Certificate of Product Certification 17 ago 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 dic 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021
Certificate CSA Product Certificate (Rev. A) 15 ago 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 feb 2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC21530EVM-286 — Módulo de evaluación UCC21530 de controlador aislado de doble canal

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
Guía del usuario: PDF | HTML
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Modelo de simulación

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

TIDM-02009 — Diseño de referencia de conversión CC/CC bidireccional de tracción de alta velocidad, evaluado media

Con este diseño de referencia se muestra el control del inversor de tracción en VEH y VE y del conversor CC/CC bidireccional mediante un solo microcontrolador (MCU) C2000™ TMS320F28388D en tiempo real. El control de tracción utiliza un convertidor de solucionador a digital (RDC) basado en software (...)
Design guide: PDF
Esquema: PDF
Diseños de referencia

TIDA-01605 — Diseño de referencia de controlador de puerta SiC MOSFET de dos canales para automoción, con protecc

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
Esquema: PDF
Diseños de referencia

TIDM-02002 — Diseño de referencia de puente activo doble (DAB) resonante CLLLC bidireccional para cargador HEV/EV

CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
Design guide: PDF
Esquema: PDF
Diseños de referencia

TIDM-02012 — Diseño de referencia de control de motores eCompressor HEV/EV HVAC de alta tensión con MathWorks®

El TIDM-02012 es un diseño de referencia de alto voltaje y 5 kW creado para aplicaciones de compresores HEV/EV (eCompressor) controlados por una MCU en tiempo real C2000™ TMS320F28003x de rendimiento medio. Está diseñado para evaluarse con bus de CC de 400 V y 800 V, cubriendo la tendencia (...)
Design guide: PDF
Diseños de referencia

PMP21999 — Diseño de referencia de convertidor resonante CLLLC bidireccional de 6,6 kW que utiliza un transform

This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
Test report: PDF
Esquema: PDF
Diseños de referencia

PMP21561 — Diseño de referencia de controlador SiC MOSFET secundario con aislamiento de seguridad

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Esquema: PDF
Diseños de referencia

PMP21553 — Diseño de referencia de controlador SiC MOSFET primario aislado de seguridad

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Esquema: PDF
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SOIC (DWK) 14 Ver opciones
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Pedidos y calidad

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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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