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UCC21530-Q1

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Automotive 4-A, 6-A, 5.7-kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

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Data sheet

UCC21530-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels (#) 2 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 6 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 25 Output VCC/VDD (Min) (V) 14.7 Input VCC (Min) (V) 3 Input VCC (Max) (V) 18 Prop delay (ns) 19 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
Number of channels (#) 2 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 6 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 25 Output VCC/VDD (Min) (V) 14.7 Input VCC (Min) (V) 3 Input VCC (Max) (V) 18 Prop delay (ns) 19 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
SOIC (DWK) 14 77 mm² 10.3 x 7.5
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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Technical documentation

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Type Title Date
* Data sheet UCC21530-Q1 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. D) PDF | HTML 29 Apr 2021
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. R) 12 Jul 2022
White paper High-Voltage Semiconductor Solutions for Meeting Isolation Requirements (Rev. A) PDF | HTML 06 Jun 2022
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計難題 (Rev. A) PDF | HTML 06 Jun 2022
White paper 높 은 신뢰도와 합리적인 가격대의 절연 기술 개발과 관련한 고전압 설계 문 제의 해결.. (Rev. A) PDF | HTML 06 Jun 2022
Application note The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate CSA Product Certificate (Rev. A) 15 Aug 2019
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. B) 22 Jul 2019
Technical article Searching for the newest innovations in power? Find them at APEC 09 Feb 2019
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21530EVM-286 — UCC21530 isolated dual-channel driver evaluation module

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
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Simulation model

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDM-02002 — Bidirectional CLLLC resonant dual active bridge (DAB) reference design for HEV/EV onboard charger

CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
Schematic: PDF
Reference designs

TIDA-020031 — Automotive 400-V battery to 12-V, 3.6-kW DC/DC converter reference design

This reference design is a 3.6-kW, automotive 400-V to 12-V unidirectional converter which converts the 200-V to 450-V DC input to 12-V, 300-A maximum output. Circuit breaker is applied for overcurrent and overvoltage protection. The converter is designed with SiC MOSFETs on the high voltage side (...)
User guide: PDF
Schematic: PDF
Reference designs

TIDM-02009 — ASIL D safety concept-assessed high-speed traction, bi-directional DC/DC conversion reference design

This reference design demonstrates control of HEV/EV traction inverter and bi-directional DC-DC converter by a single TMS320F28388D real-time C2000™ MCU. The traction control uses a software-based resolver to digital converter (RDC) driving the motor to a high speed up to 20,000 RPM. The (...)
Schematic: PDF
Reference designs

TIDA-01605 — Automotive Dual Channel SiC MOSFET Gate Driver Reference Design with Two Level Turn-off Protection

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Schematic: PDF
Reference designs

PMP21999 — 6.6 kW, bi-directional CLLLC resonant converter reference design using PCB winding transformer

This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
Schematic: PDF
Reference designs

PMP21561 — Safety isolated secondary SiC MOSFET driver reference design

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Schematic: PDF
Reference designs

PMP21553 — Safety isolated primary SiC MOSFET driver reference design

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Schematic: PDF
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SOIC (DWK) 14 View options

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