The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.
The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.
This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.
The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
With all these advanced features, the UCC21530-Q1 enables high efficiency, high power density, and robustness in a wide variety of power applications.