TPS7H6013-SP
- Radiation Performance:
- Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in independent input mode
- Split outputs for adjustable turn-on and turn-off times
- 30ns typical propagation delay in independent input mode
- 5.5ns typical delay matching
The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) | PDF | HTML | 2024/04/17 |
| * | Radiation & reliability report | TPS7H6013-SP Total Ionizing Dose (TID) Radiation Report | PDF | HTML | 2024/04/11 |
설계 및 개발
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TPS7H6013EVM-CVAL — TPS7H6013-SP 평가 모듈
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| 패키지 | 핀 | 다운로드 |
|---|---|---|
| CFP (HBX) | 48 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
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- 팹 위치
- 조립 위치
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