產品詳細資料

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
HTQFP (PHP) 48 81 mm² 9 x 9
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60-V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
    • Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtime
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1 mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3-V, and 5-V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60-V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
    • Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtime
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1 mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3-V, and 5-V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.

The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.

The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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* Data sheet DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet PDF | HTML 2023年 5月 9日
EVM User's guide DRV8334 Evaluation Module User's Guide PDF | HTML 2023年 11月 15日

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開發板

DRV8334EVM — 適用於 3 相閘極驅動器的 DRV8334 評估模組

DRV8334 評估模組 (EVM) 是以適用於 BLDC 馬達之 DRV8334 閘極驅動器為基礎的 30-A 3 相無刷 DC 驅動平台。此 EVM 可快速評估 DRV8334 產品,其會利用梯形整流和控制轉動 BLDC 馬達。所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。需要 C2000™ LaunchPad™ 開發套件 (LAUNCHXL-F280049C),以用於控制 DRV8334 以及監控和通報故障。
使用指南: PDF | HTML
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開發模組 (EVM) 的 GUI

DRV8334EVM-SENSORED-TRAPEZOIDAL-GUI DRV8334EVM GUI to support sensored trapezoidal motor control

DRV8334EVM GUI to support sensored trapezoidal motor control
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產品
BLDC 驅動器
DRV8334 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器
計算工具

BLDC-MAX-QG-MOSFET-CALCULATOR Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
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產品
BLDC 驅動器
DRV8320 65 V 最大 3 相智慧型閘極驅動器 DRV8320R 具降壓穩壓器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323 具電流分流放大器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323R 具降壓穩壓器和電流分流放大器的 65V 最大三相智慧型閘極驅動器 DRV8329 具有單電流感測放大器的 60V 3 相閘極驅動器 DRV8329-Q1 具有單電流感測放大器的車用 60V 3 相閘極驅動器 DRV8334 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器 DRV8340-Q1 車用 12V 至 24V 電池 3 相智慧型閘極驅動器 DRV8343-Q1 具有電流分流放大器的車用 12V 至 24V 電池 3 相智慧型閘極驅動器 DRV8350 102V 最大三相智慧型閘極驅動器 DRV8350F 102-V 最大 3 相功能安全品質管理智慧型閘極驅動器 DRV8350R 具降壓穩壓器的 102-V 最大 3 相智慧型閘極驅動器 DRV8353 具電流分流放大器的 102V 最大 3 相智慧型閘極驅動器 DRV8353F 具 3x CSA 的 102-V 最大 3 相功能安全品質管理智慧型閘極驅動器 DRV8353M 具有電流分流放大器和廣泛溫度的 102-V 最大 3 相智慧型閘極驅動器 DRV8353R 具降壓穩壓器和電流分流放大器的 102-V 最大 3 相智慧型閘極驅動器
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