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LM74910-Q1

現行

具有斷路器、200-kHz ACS、欠電壓與過電壓保護的車用理想二極體

產品詳細資料

Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
VQFN (RGE) 24 16 mm² 4 x 4
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast turn off response (0.5 µs)
  • 20-mA peak gate (DGATE) turn on current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 10% accuracy (IMON)
  • Adjustable overvoltage and undervoltage protection
  • Low 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-Pin VQFN package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast turn off response (0.5 µs)
  • 20-mA peak gate (DGATE) turn on current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 10% accuracy (IMON)
  • Adjustable overvoltage and undervoltage protection
  • Low 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-Pin VQFN package

The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65 V.

The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65 V.

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* Data sheet LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage, and Overvoltage Protection With Fault Output datasheet (Rev. B) PDF | HTML 2023年 7月 18日
Test report Power Delivery Reference Design for AMD Versal™ AI Edge Series PDF | HTML 2024年 3月 25日
Functional safety information LM749x0-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2024年 2月 29日
Application note Power Supply Design for AMD Versal™ AI Edge Series PDF | HTML 2024年 1月 29日
Application note Addressing Automotive Reverse Battery Protection Topologies with LM749x0-Q1 PDF | HTML 2023年 6月 13日

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開發板

LM74900Q1EVM — 適用於理想二極體控制器的 LM74900-Q1 評估模組

在反向電池保護應用中,LM74900-Q1 評估模組可評估 LM74900-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74900-Q1 如何控制兩個背對背 N 通道電源 MOSFET,模擬具有電源路徑開/關控制、過電流和過電壓防護的理想二極體整流器。

使用指南: PDF | HTML
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模擬型號

LM74910-Q1 PSpice Transient Model

SNOM778.ZIP (114 KB) - PSpice Model
計算工具

LM749X0-CALC Design calculator for LM74900-Q1 and LM74910-Q1 devices

The design calculator allows user to size the external peripheral components while designing with LM74900-Q1 and LM74910-Q1 Devices
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產品
理想二極體/ORing 控制器
LM74900-Q1 具有斷路器、欠電壓與過電壓保護和故障輸出的車用理想二極體 LM74910-Q1 具有斷路器、200-kHz ACS、欠電壓與過電壓保護的車用理想二極體
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

PMP23227 — 適用於 AMD Versal™ Edge AI 系列的電力傳輸參考設計

此參考設計展示了 VE2302 裝置所需的電源軌如何由 TI 的穩壓器 IC 供電。AMD 的最小供應器電源軌電力整合。請參見 AMD 的 Power Design Manager (PDM) 工具,以了解所有可用的電源整合選項。在預估任何應用的功率時,請使用 PDM。此參考設計使用範例功率估計。設計 AI Edge 系列其他裝置的電源樹狀架構時,也可使用此設計做為基礎。此系統的原始電源通常介於 8VIN 至 18VIN 之間,並可提供約 50W 的功率。
Test report: PDF
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VQFN (RGE) 24 檢視選項

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