Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage

VDS (max) (V)

650

RDS(on) (mΩ)

120

ID (max) (A)

8.5

Features

Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage

VQFN (REQ)

38

42.4 mm² 8 x 5.3

650-V 120-mΩ GaN power FET
Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
Overtemperature protection with FLT pin reporting
AUX quiescent current: 55 µA
Maximum supply and input logic pin voltage: 26 V
8 mm × 5.3 mm QFN package with thermal pad

650-V 120-mΩ GaN power FET
Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
Overtemperature protection with FLT pin reporting
AUX quiescent current: 55 µA
Maximum supply and input logic pin voltage: 26 V
8 mm × 5.3 mm QFN package with thermal pad

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

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	類型	標題		日期
*	Data sheet	LMG3612650-V120-mΩ GaN FET With Integrated Driver datasheet	PDF \| HTML	2023年 11月 14日
	Technical article	The benefits of low-power GaN in common AC/DC power topologies	PDF \| HTML	2024年 1月 30日
	Product overview	Designing With the LMG362x Family of Low-Power GaN FETs	PDF \| HTML	2023年 11月 28日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG3622EVM-082 — 適用於具 USB Type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3622 評估模組

LMG3622EVM-082 使用具備整合電流感測模擬功能與 GaN FET 的 LMG3622，展示 65-W USB Type-C® 電力傳輸 (PD) 離線轉接器的高效率和高密度。輸入支援通用 90 V_AC 至 265 V_AC，單輸出在最大電流 3-A 時可設爲 5 V、9 V 和 15 V，最大電流 3.25-A 時則為 20 V，可透過 USB PD 介面控制器進行調整。高達 200-kHz 額定值的高頻運作，可實現較小的解決方案尺寸，同時多模式運作可保持高效率。輸出則採用同步整流以提升效率。

使用指南: PDF | HTML

要求

計算工具

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.

支援產品和硬體

產品

氮化鎵 (GaN) 功率級

LMG3612 — 具有整合式驅動器和防護功能的 650-V 120-mΩ GaN FET

LMG3616 — 具有整合式驅動器和防護功能的 650-V 270-mΩ GaN FET

LMG3622 — 具有整合式驅動器、防護和電流感測的 650V 120mΩ GaN FET

LMG3624 — 具有整合式驅動器、防護和電流感測的 650V 170mΩ GaN FET

LMG3626 — 具有整合式驅動器、防護和電流感測的 650V 270mΩ GaN FET

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LMG3612

具有整合式驅動器和防護功能的 650-V 120-mΩ GaN FET

LMG3612

產品詳細資料

技術文件

設計與開發

LMG3622EVM-082 — 適用於具 USB Type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3622 評估模組

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

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產品

氮化鎵 (GaN) 功率級

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LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

氮化鎵 (GaN) 功率級

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