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隔離式閘極驅動器

UCC21710

現行

適用於 IGBT/SiC 且具 OC 偵測、內部箝位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器

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產品規格表

UCC21710

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 800 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 800 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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UCC21750 現行 適用於 IGBT/SiCFET 且具 DESAT 和內部米勒鉗位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器 Supports overcurrent protection

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類型 標題 日期
* Data sheet UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. B) PDF | HTML 2023年 5月 5日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Technical article How silicon carbide helps maximize efficiency in renewable energy systems PDF | HTML 2024年 1月 4日
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023年 9月 1日
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 2023年 6月 7日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 2021年 10月 26日
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 2020年 1月 16日
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML 2019年 8月 6日
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 2019年 1月 30日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21710QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
使用指南: PDF
TI.com 無法提供
開發板

UCC21710QDWEVM-054 — 適用 Wolfspeed® 1200-V SiC 平台的 UCC21710 評估模組

UCC21710QDWEVM-054 是精巧型半橋閘極驅動器評估模組，由兩個單通道及隔離式閘極驅動器組成。此評估模組可針對數種不同 Wolfspeed® 碳化矽 (SiC) MOSFET 模組和離散式 SiC MOSFET，以及具備類似接腳配置的其他絕緣柵極雙極電晶體 (IGBT) 或 SiC MOSFET 模組，提供驅動所需的供應電壓、驅動、保護與監控功能。

使用指南: PDF
TI.com 無法提供
模擬型號

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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模擬型號

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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設計工具

SLURAZ2 — UCC217xxEVM Design Files

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產品
隔離式閘極驅動器
UCC21710 — 適用於 IGBT/SiC 且具 OC 偵測、內部箝位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器
硬體開發
開發板
UCC21710QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板 UCC21732QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板 UCC21750QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

TIDA-01606 — 10-kW、雙向三相三級 (T 型) 逆變器和 PFC 參考設計

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching (...)
Design guide: PDF
電路圖: PDF
參考設計

PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計

此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關，其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器，或是可以用電容模擬負載進行測試。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品，每個元件都具備不同的目標輸入電壓和輸出功率。

UCC14xxx-Q1 資訊：

  • UCC14240-Q1
    • 隔離：基本
    • 輸入電壓 (V)：24 (21 至 27)
    • 輸出電壓 (V)：25 (18 至 25)
    • 功率輸出 (...)
Test report: PDF
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