SBAS629B October 2015 – June 2017 ADS9110
PRODUCTION DATA.
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| AVDD | Analog supply voltage | 1.8 | V | ||
| DVDD | Digital supply voltage | 1.8 | V | ||
| REFP | Positive reference | 5 | V | ||
| THERMAL METRIC(1) | ADS9110 | UNITS | |
|---|---|---|---|
| RGE (VQFN) | |||
| 24 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 31.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 29.9 | °C/W |
| RθJB | Junction-to-board thermal resistance | 8.9 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
| ψJB | Junction-to-board characterization parameter | 8.9 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.0 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| ANALOG INPUT | ||||||
| FSR | Full-scale input range (AINP – AINM)(1) |
–VREF | VREF | V | ||
| VIN | Absolute input voltage (AINP and AINM to REFGND) |
–0.1 | VREF + 0.1 | V | ||
| VCM | Common-mode voltage range (AINP + AINM) / 2 |
TA = –40°C to +85°C | (VREF / 2) – 0.1 | VREF / 2 | (VREF / 2) + 0.1 | V |
| TA = –40°C to +125°C | (VREF / 2) – 0.075 | VREF / 2 | (VREF / 2) + 0.075 | |||
| CIN | Input capacitance | In sample mode | 60 | pF | ||
| In hold mode | 4 | |||||
| IIL | Input leakage current | ±1 | µA | |||
| VOLTAGE REFERENCE INPUT | ||||||
| VREF | Reference input voltage range | 2.5 | 5 | V | ||
| IREF | Reference input current | Average current, VREF = 5 V, 2-kHz, full-scale input, throughput = 2 MSPS |
1.25 | mA | ||
| DC ACCURACY | ||||||
| Resolution | 18 | Bits | ||||
| NMC | No missing codes | 18 | Bits | |||
| INL | Integral nonlinearity | TA = –40°C to +85°C | –1.5 | ±0.5(2) | 1.5 | LSB(3) |
| –5.7 | ±2 | 5.7 | ppm | |||
| TA = –40°C to +125°C | –1.85 | ±0.5 | 1.85 | LSB | ||
| –7 | ±2 | 7 | ppm | |||
| DNL | Differential nonlinearity | –0.75 | ±0.4(2) | 0.75 | LSB | |
| E(IO) | Input offset error | –1 | ±0.05(2) | 1 | mV | |
| dVOS/dT | Input offset thermal drift | 1 | μV/°C | |||
| GE | Gain error | –0.01 | ±0.005(2) | 0.01 | %FS | |
| GE/dT | Gain error thermal drift | 0.25 | ppm/°C | |||
| Transition noise | 0.9 | LSB | ||||
| CMRR | Common-mode rejection ratio | At dc to 20 kHz | 80 | dB | ||
| AC ACCURACY(4) | ||||||
| SINAD | Signal-to-noise + distortion | fIN = 2 kHz, TA = –40°C to +85°C | 98 | 99.9 | dB | |
| fIN = 2 kHz, TA = –40°C to +125°C | 97 | 99.9 | ||||
| fIN = 100 kHz | 95.4 | |||||
| fIN = 500 kHz | 89 | |||||
| SNR | Signal-to-noise ratio | fIN = 2 kHz, TA = –40°C to +85°C | 98.1 | 100 | dB | |
| fIN = 2 kHz, TA = –40°C to +125°C | 97.2 | 100 | ||||
| fIN = 100 kHz | 95.5 | |||||
| fIN = 500 kHz | 89.3 | |||||
| THD | Total harmonic distortion(5) | fIN = 2 kHz | –118 | dB | ||
| fIN = 100 kHz | –111 | |||||
| fIN = 500 kHz | –101 | |||||
| SFDR | Spurious-free dynamic range | fIN = 2 kHz | 123 | dB | ||
| fIN = 100 kHz | 116 | |||||
| fIN = 500 kHz | 106 | |||||
| DIGITAL INPUTS(6) | ||||||
| VIH | High-level input voltage | 0.65 DVDD | DVDD + 0.3 | V | ||
| VIL | Low-level input voltage | –0.3 | 0.35 DVDD | V | ||
| DIGITAL OUTPUTS(6) | ||||||
| VOH | High-level output voltage | IOH = 2-mA source | DVDD – 0.45 | V | ||
| VOL | Low-level output voltage | IOH = 2-mA sink | 0.45 | V | ||
| POWER SUPPLY | ||||||
| AVDD | Analog supply voltage | 1.65 | 1.8 | 1.95 | V | |
| DVDD | Digital supply voltage | 1.65 | 1.8 | 1.95 | V | |
| IDD | AVDD supply current (AVDD = 1.8 V) |
Active, 2-MSPS throughput, TA = –40°C to +85°C |
5 | 6.25 | mA | |
| Active, 2-MSPS throughput,
TA = –40°C to +125°C |
5 | 6.5 | ||||
| Static, ACQ state | 3.7 | mA | ||||
| Low-power, NAP mode | 500 | µA | ||||
| Power-down, PD state | 1 | |||||
| PD | AVDD power dissipation (AVDD = 1.8 V) |
Active, 2-MSPS throughput, TA = –40°C to +85°C |
9 | 11.25 | mW | |
| Active, 2-MSPS throughput, TA = –40°C to +125°C |
9 | 11.7 | ||||
| Static, ACQ state | 6.6 | mW | ||||
| Low-power, NAP mode | 900 | µW | ||||
| Power-down, PD state | 1.8 | |||||
| TEMPERATURE RANGE | ||||||
| TA | Operating free-air temperature | –40 | 125 | °C | ||
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| TIMING REQUIREMENTS | |||||
| fcycle | Sampling frequency | 2 | MHz | ||
| tcycle | ADC cycle time period | 500 | ns | ||
| twh_CONVST | Pulse duration: CONVST high | 30 | ns | ||
| twl_CONVST | Pulse duration: CONVST low | 30 | ns | ||
| tacq | Acquisition time | 150 | ns | ||
| tqt_acq | Quiet acquisition time(1) | 25 | ns | ||
| td_cnvcap | Quiet aperture time(1) | 10 | ns | ||
| TIMING SPECIFICATIONS | |||||
| tconv | Conversion time | 300 | 340 | ns | |
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| TIMING REQUIREMENTS | |||||
| twl_RST | Pulse duration: RST low | 100 | ns | ||
| TIMING SPECIFICATIONS | |||||
| td_rst | Delay time: RST rising to RVS rising | 1250 | µs | ||
| tnap_wkup | Wake-up time: NAP mode | 300 | ns | ||
| tPWRUP | Power-up time: PD mode | 250 | µs | ||
| MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| TIMING REQUIREMENTS | ||||||
| fCLK | Serial clock frequency | 75 | MHz | |||
| tCLK | Serial clock time period | 13.33 | ns | |||
| tph_CK | SCLK high time | 0.45 | 0.55 | tCLK | ||
| tpl_CK | SCLK low time | 0.45 | 0.55 | tCLK | ||
| tsu_CSCK | Setup time: CS falling to the first SCLK capture edge | 5 | ns | |||
| tsu_CKDI | Setup time: SDI data valid to the SCLK capture edge | 1.2 | ns | |||
| tht_CKDI | Hold time: SCLK capture edge to (previous) data valid on SDI | 0.65 | ns | |||
| tht_CKCS | Delay time: last SCLK falling to CS rising | 5 | ns | |||
| TIMING SPECIFICATIONS | ||||||
| tden_CSDO | Delay time: CS falling to data enable | 4.5 | ns | |||
| tdz_CSDO | Delay time: CS rising to SDO going to 3-state | 10 | ns | |||
| td_CKDO | Delay time: SCLK launch edge to (next) data valid on SDO | 6.5 | ns | |||
| td_CSRDY_f | Delay time: CS falling to RVS falling | 5 | ns | |||
| td_CSRDY_r | Delay time: CS rising to RVS rising |
After NOP operation | 10 | ns | ||
| After WR or RD operation | 70 | |||||
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| TIMING REQUIREMENTS | |||||
| fCLK | Serial clock frequency | 100 | MHz | ||
| tCLK | Serial clock time period | 10 | ns | ||
| TIMING SPECIFICATIONS(1) | |||||
| td_CKSTR_r | Delay time: SCLK launch edge to RVS rising | 8.5 | ns | ||
| td_CKSTR_f | Delay time: SCLK launch edge to RVS falling | 8.5 | ns | ||
| toff_STRDO_f | Time offset: RVS rising to (next) data valid on SDO | –0.5 | 0.5 | ns | |
| toff_STRDO_r | Time offset: RVS falling to (next) data valid on SDO | –0.5 | 0.5 | ns | |
| MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| TIMING SPECIFICATIONS(1) | ||||||
| td_CSSTR | Delay time: CS falling to RVS rising | 12 | 40 | ns | ||
| toff_STRDO_f | Time offset: RVS rising to (next) data valid on SDO | –0.5 | 0.5 | ns | ||
| toff_STRDO_r | Time offset: RVS falling to (next) data valid on SDO | –0.5 | 0.5 | ns | ||
| tSTR | Strobe output time period | INTCLK option | 9.9 | 11.1 | ns | |
| INTCLK / 2 option | 19.8 | 22.2 | ||||
| INTCLK / 4 option | 39.6 | 44.4 | ||||
| tph_STR | Strobe output high time | 0.45 | 0.55 | tSTR | ||
| tpl_STR | Strobe output low time | 0.45 | 0.55 | tSTR | ||
Figure 1. Conversion Cycle Timing Diagram
Figure 2. Asynchronous Reset Timing Diagram
Figure 3. NAP Mode Timing Diagram
Figure 5. Source-Synchronous Serial Interface Timing Diagram (External Clock)
Figure 6. Source-Synchronous Serial Interface Timing Diagram (Internal Clock)
| Typical INL = ±0.5 LSB |
| 600 devices |
| VREF = 5 V |
| TA = 25°C |
| Standard deviation = 0.9 LSB |
| fIN = 2 kHz, SNR = 100 dB, THD = –120 dB |
| fIN = 2 kHz, VREF = 5 V |
| fIN = 2 kHz, TA = 25°C |
| VREF = 5 V, TA = 25°C |
| 600 devices |
| VREF = 5 V |
| TA = 25°C |
| 2 MSPS |
| 2 MSPS |
| Typical DNL = ±0.4 LSB |
| 600 devices |
| VREF = 5 V |
| TA = 25°C |
| Standard deviation = 0.9 LSB |
| fIN = 100 kHz, SNR = 97.5 dB, THD = –113 dB |
| fIN = 2 kHz, VREF = 5 V |
| fIN = 2 kHz, TA = 25°C |
| VREF = 5 V, TA = 25°C |
| 600 devices |
| VREF = 5 V |
| TA = 25°C |
| TA = 25°C |
| TA = 25°C |