SLPS411G April   2013  – January 2022 CSD17381F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Dimensions

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage 30 V
Qg Gate charge total (4.5 V) 1040 pC
Qgd Gate charge gate-to-drain 133 pC
RDS(on) Drain-to-source on-resistance VGS = 1.8 V 160 mΩ
VGS = 2.5 V 110 mΩ
VGS = 4.5 V 90 mΩ
VGS(th) Threshold voltage 0.85 V

Ordering Information
DEVICE(1)QTYMEDIAPACKAGESHIP
CSD17381F430007-Inch reelFemto (0402) 1.0 mm ×0.6 mm SMD Lead LessTape and reel
CSD17381F4T250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise statedVALUEUNIT
VDSDrain-to-source voltage30V
VGSGate-to-source voltage12V
IDContinuous drain current, TA = 25°C(1)3.1A
IDMPulsed Drain Current, TA = 25°C(2)12A
IGContinuous gate clamp current35mA
Pulsed gate clamp current(2)350
PDPower dissipation(1)500mW
ESD RatingHuman body model (HBM)4kV
Charged device model (CDM)2kV
TJ,
Tstg		Operating junction and
storage temperature range		–55 to 150°C
EASAvalanche energy, single pulse ID = 7.4 A,
L = 0.1 mH, RG = 25 Ω		2.7mJ
(1) Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
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