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CSD17381F4

ACTIVE

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

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Data sheet

CSD17381F4

ACTIVE
Data sheet Order now

Product details

VDS (V) 30 Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 117 Rds(on) at VGS=10 V (max) (mΩ) 109 IDM - pulsed drain current (max) (A) 10 QG (typ) (nC) 1.04 QGD (typ) (nC) 0.133 QGS (typ) (nC) 0.226 VGS (V) 12 VGSTH typ (typ) (V) 0.85 ID - silicon limited at TC=25°C (A) 3.1 ID - package limited (A) 3.1 Logic level Yes Operating temperature range (°C) -55 to 150 Rating Catalog
VDS (V) 30 Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 117 Rds(on) at VGS=10 V (max) (mΩ) 109 IDM - pulsed drain current (max) (A) 10 QG (typ) (nC) 1.04 QGD (typ) (nC) 0.133 QGS (typ) (nC) 0.226 VGS (V) 12 VGSTH typ (typ) (V) 0.85 ID - silicon limited at TC=25°C (A) 3.1 ID - package limited (A) 3.1 Logic level Yes Operating temperature range (°C) -55 to 150 Rating Catalog
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Technical documentation

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Type Title Date
* Data sheet CSD17381F4 30-V N-Channel FemtoFET MOSFET datasheet (Rev. G) PDF | HTML 10 Mar 2022
Application note MOSFET Support and Training Tools (Rev. B) PDF | HTML 29 Mar 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 21 Oct 2022
Application note Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Technical article What type of ESD protection does your MOSFET include? 22 Jun 2020
More literature WCSP Handling Guide 07 Nov 2019
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
EVM User's guide Ultra-Small Footprint N-Channel FemtoFET™ MOSFET Test EVM 06 Dec 2017
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Application note Semiconductor and IC Package Thermal Metrics (Rev. C) PDF | HTML 19 Apr 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FNCHEVM-889 — FemtoFET N-ch Evaluation Module

This FemtoFET N-ch EVM includes seven daughter cards, each card containing a different FemtoFET N-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The seven FemtoFETs range from 12V to 40V Vds, and the size of the devices include F3 (...)
User guide: PDF
Not available on TI.com
Support software

Power Loss Calculation Tool for Load Switch (Rev. A)

SLPC019A.ZIP (375 KB)
Download
Simulation model

CSD17381F4 TINA-TI Spice Model

SLPM134.TSM (7 KB) - TINA-TI Spice Model
Download
Simulation model

CSD17381F4 Unencrypted PSpice Model (Rev. A)

SLPM073A.ZIP (3 KB) - PSpice Model
Download
Calculation tool

MOSFET-LOSS-CALC — Power Loss Calculation Tool for MOSFET Products

The MOSFET-LOSS-CALC is an Excel based tool that allows users to estimate power loss in a synchronous buck converter based on system and MOSFET parameters. For help selecting a discrete MOSFET or power block solution for your buck converter application, check out our Buck Converter NexFET™ (...)
Download
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Download
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Download
Reference designs

TIDA-01352 — 400-W Continuous, Scalable, ±2.5- to ±150-V, Programmable Ultrasound Power Supply Reference Design

The TIDA-01352 enables modular and efficient power scaling capability by providing a solution for digitally programmable power supply for powering ultrasound transmit circuit. The design uses push-pull topology to generate high-voltage (HV) and low- (LV) or MID- voltage power supplies. The HV (...)
Design guide: PDF
Schematic: PDF
Package Pins Download
PICOSTAR (YJC) 3 View options
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Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

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