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CSD17381F4

ACTIVE

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

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Data sheet

CSD17381F4

ACTIVE
Data sheet Order now

Product details

VDS (V) 30 VGS (V) 12 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 109 Rds(on) at VGS=4.5 V (max) (mΩ) 117 Rds(on) at VGS=2.5 V (max) (mΩ) 143 VGSTH typ (typ) (V) 0.85 QG (typ) (nC) 1.04 QGD (typ) (nC) 0.133 QGS (typ) (nC) 0.226 ID - silicon limited at TC=25°C (A) 3.1 ID - package limited (A) 3.1 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 30 VGS (V) 12 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 109 Rds(on) at VGS=4.5 V (max) (mΩ) 117 Rds(on) at VGS=2.5 V (max) (mΩ) 143 VGSTH typ (typ) (V) 0.85 QG (typ) (nC) 1.04 QGD (typ) (nC) 0.133 QGS (typ) (nC) 0.226 ID - silicon limited at TC=25°C (A) 3.1 ID - package limited (A) 3.1 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet CSD17381F4 30-V N-Channel FemtoFET MOSFET datasheet (Rev. G) PDF | HTML 10 Mar 2022
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Avoid Common Mistakes When Selecting And Designing With Power MOSFETs PDF | HTML 06 Nov 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Technical article What type of ESD protection does your MOSFET include? PDF | HTML 22 Jun 2020
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FNCHEVM-889 — FemtoFET N-ch evaluation module

This FemtoFET N-ch evaluation module (EVM) includes seven daughter cards, each card containing a different FemtoFET N-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The seven FemtoFETs range from 12V to 60V VDS, and the size of the devices (...)

User guide: PDF
Not available on TI.com
Support software

LOAD-SWITCH-FET-LOSS-CALC — Power Loss Calculation Tool for Load Switch

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware
Download
Support software

NONSYNC-BOOST-FET-LOSS-CALC — NONSYNC BOOST FET LOSS Calculator

MOSFET power loss calculator for non-synchronous boost converter
Supported products & hardware

Supported products & hardware
Download
Simulation model

CSD17381F4 TINA-TI Spice Model

SLPM134.TSM (7 KB) - TINA-TI Spice Model
Download
Simulation model

CSD17381F4 Unencrypted PSpice Model (Rev. A)

SLPM073A.ZIP (3 KB) - PSpice Model
Download
Calculation tool

FET-SOA-CALC-SELECT — MOSFET SOA calculation and selection tool

Excel based FET SOA calculation and selection tool
Supported products & hardware

Supported products & hardware
Download
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — Power Loss Calculation Tool for Synchronous Buck Converter

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware
Download
Reference designs

TIDA-01352 — 400-W Continuous, Scalable, ±2.5- to ±150-V, Programmable Ultrasound Power Supply Reference Design

The TIDA-01352 enables modular and efficient power scaling capability by providing a solution for digitally programmable power supply for powering ultrasound transmit circuit. The design uses push-pull topology to generate high-voltage (HV) and low- (LV) or MID- voltage power supplies. The HV (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
PICOSTAR (YJC) 3 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

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  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

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