SLPS411G April   2013  – January 2022 CSD17381F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = 250 μA30V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = 24 V100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = 10 V50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = 250 μA0.650.851.10V
RDS(on)Drain-to-Source On-ResistanceVGS = 1.8 V, IDS =0.5 A160250mΩ
VGS = 2.5 V, IDS =0.5 A110143mΩ
VGS = 4.5 V, IDS = 0.5 A90117mΩ
VGS = 8 V, IDS =0.5 A84109mΩ
gfsTransconductanceVDS = 15 V, IDS = 0.5 A4.8S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		150195pF
CossOutput Capacitance4457pF
CrssReverse Transfer Capacitance2.22.9pF
RGSeries Gate Resistance23Ω
QgGate Charge Total (4.5 V)VDS = 15 V, IDS = 0.5 A10401350pC
QgdGate Charge Gate-to-Drain133pC
QgsGate Charge Gate-to-Source226pC
Qg(th)Gate Charge at Vth150pC
QossOutput ChargeVDS = 15 V, VGS = 0 V1110pC
td(on)Turn On Delay TimeVDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A,RG = 2 Ω		3.4ns
trRise Time1.4ns
td(off)Turn Off Delay Time10.8ns
tfFall Time3.6ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 0.5 A, VGS = 0 V0.730.9V
QrrReverse Recovery ChargeVDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs1500pC
trrReverse Recovery Time5.6ns