DLPS073F March 2016 – May 2019 DLP5530-Q1
Refer to the PDF data sheet for device specific package drawings
A temperature sensing diode is based on the fundamental current and temperature characteristics of a transistor. The diode is formed by connecting the transistor base to the collector. Three different known currents flow through the diode and the resulting diode voltage is measured in each case. The difference in their base–emitter voltages is proportional to the absolute temperature of the transistor.
Refer to the TMP411-Q1 data sheet for detailed information about temperature diode theory and measurement. Figure 17 and Figure 18 illustrate the relationships between the current and voltage through the diode.