SLVSDP7A February 2017 – May 2017 DLPA1000
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Input voltage | VINL, VINA, VINR | –0.3 | 7 | V | |
| Ground pins to system ground | –0.3 | 0.3 | V | ||
| Voltage | SWN | –18 | 7 | V | |
| SWP, VBIAS | –0.3 | 20 | |||
| VOFS | –0.3 | 10 | |||
| V6V, VLED, L1, L2, SW1, SW2, SW3, SW4, SW5, SW6, INTZ, PROJ_ON | –0.3 | 7 | |||
| All pins unless noted otherwise | –0.3 | 3.6 | V | ||
| Source current | RESETZ, PWR_EN, CMP_OUT | 1 | mA | ||
| SPI_DOUT | 5.5 | ||||
| Sink current | RESETZ, PWR_EN, CMP_OUT | 1 | mA | ||
| SPI_DOUT, INTZ | 5.5 | ||||
| Peak output current | Internally limited | mA | |||
| Continuous total power dissipation | Internally limited | W | |||
| TA | Operating ambient temperature | –30 | 85 | °C | |
| Tstg | Storage temperature | –65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| Input voltage at VINL, VINA, VINR | Full functional and parametric performance | 2.7 | 3.6 | 6 | V | |
| Extended operation, limited parametric performance | 2.3 | 3.6 | 6 | |||
| Voltage at VSPI | 1.7 | 1.8 | 3.6 | V | ||
| TA | Operating ambient temperature | –10 | 85 | °C | ||
| TJ | Operating junction temperature | –10 | 125 | °C | ||
| THERMAL METRIC(1) | DLPA1000 | UNIT | |
|---|---|---|---|
| YFF (DSBGA) | |||
| 49 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 49 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 0.1 | °C/W |
| RθJB | Junction-to-board thermal resistance | 6.9 | °C/W |
| ψJT | Junction-to-top characterization parameter | 1.1 | °C/W |
| ψJB | Junction-to-board characterization parameter | 6.9 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| INPUT VOLTAGE | |||||||
| VIN | Input voltage range | VINA, VINR, VINL | 2.7 | 3.6 | 6 | V | |
| Extended input voltage range(1) | 2.3 | 3.6 | 6 | ||||
| VLOW_BAT | Low battery warning threshold | VINA falling | 3 | V | |||
| Hysteresis | VINA rising | 100 | mV | ||||
| VUVLO | Undervoltage lockout threshold | VINA falling | 2.3 | V | |||
| Hysteresis | VINA rising | 100 | mV | ||||
| VSTARTUP | Startup voltage | VBIAS, VOFS, VRST loaded with 2 mA | 2.5 | V | |||
| INPUT CURRENT | |||||||
| IQ | ACTIVE2 mode | 12 | mA | ||||
| ISTD | STANDBY mode | 360 | µA | ||||
| ISLEEP | SLEEP mode | 10 | µA | ||||
| INTERNAL SUPPLIES | |||||||
| VV6V | Internal supply, analog | 6.25 | V | ||||
| CLDO_V6V | Filter capacitor for V6V LDO | 100 | nF | ||||
| VV2V5 | Internal supply, logic | 2.5 | V | ||||
| CLDO_V2V5 | Filter capacitor for V2V5 LDO | 2.2 | µF | ||||
| DMD REGULATOR | |||||||
| RDS(ON) | MOSFET on resistance | Switch E (from VINR to SWN) | 1000 | mΩ | |||
| Switch F (from SWP to PGND) | 320 | ||||||
| VFW | Forward voltage drop | Switch G (from SWP to VBIAS)(2)
VINR = 5 V, VSWP = 2 V, IF = 100 mA |
1.3 | V | |||
| Switch H (from SWP to VOFS) VINR = 5 V, VSWP = 2 V, IF = 100 mA |
1.3 | ||||||
| RDIS | Discharge resistor (SWP to GND) | Active when all rails are disabled | 2 | kΩ | |||
| tPG | Power-good timeout | Not tested in production | 6 | ms | |||
| ILIMIT | Switch current limit | 200(3) | mA | ||||
| L | Inductor value | 10 | µH | ||||
| VOFS REGULATOR | |||||||
| VOFS | Output voltage | 8.5 | V | ||||
| DC output voltage accuracy | IOUT = 2 mA | –2% | 2% | ||||
| DC load regulation | VIN = 3.6 V, IOUT= 0 mA to 4 mA | –19 | V/A | ||||
| DC line regulation | VINA, VINL, VINR 2.7 V to 6 V, IOUT = 2 mA |
35 | mV/V | ||||
| VRIPPLE | Output ripple | VIN = 3.6 V, IOUT = 4 mA, COUT = 220 nF | 240 | mV | |||
| IOUT | Output current | 0 | 3 | mA | |||
| PG | Power-good threshold (fraction of nominal output voltage) |
VOFS rising | 85% | ||||
| VOFS falling | 62% | ||||||
| RDIS | Output discharge resistor | Active when rail is disabled | 2 | kΩ | |||
| C | Output capacitor | Recommended value | 110 | 220 | nF | ||
| VBIAS REGULATOR | |||||||
| VBIAS | Output voltage | 16 | V | ||||
| DC output voltage accuracy | IOUT = 2 mA | –2% | 2% | ||||
| DC load regulation | VIN = 3.6 V, IOUT = 0 mA to 4 mA | –14 | V/A | ||||
| DC line regulation | VINA, VINL, VINR 2.7 V to 6 V, IOUT = 2 mA |
18 | mV/V | ||||
| VRIPPLE | Output ripple | VIN = 3.6 V, IOUT = 4 mA, COUT = 220 nF | 240 | mV | |||
| IOUT | Output current | 0 | 4 | mA | |||
| PG | Power-good threshold (fraction of nominal output voltage) |
VOFS rising | 85% | ||||
| VOFS falling | 62% | ||||||
| RDIS | Output discharge resistor | Active when rail is disabled | 2 | kΩ | |||
| C | Output capacitor | Recommended value | 110 | 220 | nF | ||
| VRST REGULATOR | |||||||
| VRST | Output voltage | –10 | V | ||||
| DC output voltage accuracy | IOUT = 2 mA | –2% | 2% | ||||
| DC load regulation | VIN = 3.6 V, IOUT = 0 mA to 4 mA | 13 | V/A | ||||
| DC line regulation | VINA, VINL, VINR 2.7 V to 6 V, IOUT = 2 mA |
–21 | mV/V | ||||
| VRIPPLE | Output ripple | VIN = 3.6 V, IOUT = 4 mA, COUT = 220 nF | 240 | mV | |||
| VREF_VRST | Reference voltage | 500 | mV | ||||
| IOUT | Output current | 0 | 4 | mA | |||
| PG | Power-good threshold | –9.1 | V | ||||
| C | Output capacitor | Recommended value | 110 | 220 | nF | ||
| VLED BUCK-BOOST | |||||||
| VLED | Output voltage range | 1.2 | 5.9 | V | |||
| Default output voltage | SW4/5/6 in OPEN position | 3.5 | |||||
| VOVP | Output overvoltage protection | Clamps buck-boost output | 5.9 | V | |||
| VLED_OVP | Fault detection threshold | Triggers VLED_OVP interrupt | 5.4 | V | |||
| ISW | Switch current limit | 1.65 | 2.2 | 2.5 | A | ||
| RDS(ON) | MOSFET on resistance | Switch A (from VINL to L1) | 100 | mΩ | |||
| Switch B (from L1 to GND) | 100 | ||||||
| Switch C (from L2 to GND) | 100 | ||||||
| Switch D (from L2 to VLED) | 100 | ||||||
| fSW | Switching frequency | 2.25 | MHz | ||||
| COUT | Output capacitance | 2 × 10 | µF | ||||
| RGB STROBE CONTROLLER SWITCHES | |||||||
| RDS(ON) | Drain-source on resistance | SW1, SW2, SW3 | 50 | 100 | mΩ | ||
| SW4, SW5, SW6 | 40 | 100 | |||||
| ILEAK | Off-state leakage current | VDS = 5 V | 1 | µA | |||
| LED CURRENT CONTROL | |||||||
| Vf | LED forward voltage | ILED = 1 A | 4.8 | V | |||
| ILED | Maximum LED drive current | VIN = 3.1 V, VLED = 4.4 V | 700 | mA | |||
| VIN = 4 V, VLED = 4.4 V | 1000 | ||||||
| DC current accuracy, SW4, 5, 6 | SWx_IDAC[9:0] = 0x100h RLIM = 100 mΩ, 0.1%, TA = 25°C |
258 | 272 | 286 | mA | ||
| Transient LED current limit range | ILIM[2:0] = 000 | 260 | mA | ||||
| ILIM[2:0] = 111 | 1250 | ||||||
| trise | Current rise time(4) | ILED from 5% to 95%, ILED = 300 mA, transient current limit disabled | 50 | µs | |||
| MEASUREMENT SYSTEM (AFE) | |||||||
| G | Amplifier gain (PGA) | AFE_GAIN[1:0] = 01 | 1 | V/V | |||
| AFE_GAIN[1:0] = 10 | 9.5 | ||||||
| AFE_GAIN[1:0] = 11 | 18 | ||||||
| VOFS | Input referred offset voltage(4) | PGA, AFE_CAL_DIS = 1 | –1 | 1 | mV | ||
| Comparator | –1.5 | 1.5 | |||||
| tsettle | Settling time(4) | To 1% of final value | 15 | µs | |||
| To 0.1% of final value | 52 | ||||||
| fsample | Sampling rate(4) | 19 | kHz | ||||
| LOGIC LEVELS AND TIMING CHARACTERISTICS | |||||||
| VOL | Output low-level | IO = 0.5 mA, sink current (RESETZ, PWR_EN, CMP_OUT) |
0 | 0.3 | V | ||
| IO = 5 mA, sink current (SPI_DOUT, INTZ) |
0 | 0.3 | |||||
| VOH | Output high-level | IO = 0.5 mA, source current (RESETZ, PWR_EN, CMP_OUT) |
1.3 | 2.5 | V | ||
| IO = 5 mA, sink current (SPI_DOUT) |
1.3 | 2.5 | |||||
| VIL | Input low-level | TEST, PROJ_ON, LED_SEL0, LED_SEL1, SPI_CSZ, SPI_CLK, SPI_DIN | 0.4 | V | |||
| VIH | Input high-level | TEST, PROJ_ON, LED_SEL0, LED_SEL1, SPI_CSZ, SPI_CLK, SPI_DIN | 1.2 | V | |||
| I(bias) | Input bias current | VIO = 3.3 V Any input pin |
0.5 | µA | |||
| tdeglitch | Deglitch time(4) | (PROJ_ON, TEST) pins | 1 | ms | |||
| (LED_SEL0, LED_SEL1) pins | 300 | ns | |||||
| INTERNAL OSCILLATOR | |||||||
| fOSC | Oscillator frequency | 9 | MHz | ||||
| Frequency accuracy | TA = –40°C to 85°C | –10% | 10% | ||||
| THERMAL SHUTDOWN | |||||||
| TWARN | Thermal warning (HOT threshold) | 120 | °C | ||||
| Hysteresis | 10 | ||||||
| TSHTDWN | Thermal shutdown (TSD threshold) | 150 | °C | ||||
| Hysteresis | 15 | ||||||
| PARAMETER | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| fCLK | Serial clock frequency | 0 | 33.34 | MHz | |
| tCLKL | Pulse width low, SPI_CLK, 50% level | 10 | ns | ||
| tCLKH | Pulse width high, SPI_CLK, 50% level | 10 | ns | ||
| tt | Transition time, 20% to 80% level, all signals | 0.2 | 4 | ns | |
| tCSCR | SPI_CSZ falling to SPI_CLK rising, 50% level | 8 | ns | ||
| tCFCS | SPI_CLK falling to SPI_CSZ rising, 50% level | 1 | ns | ||
| tCDS | SPI_DIN data setup time, 50% level | 7 | ns | ||
| tCDH | SPI_DIN data hold time, 50% level | 6 | ns | ||
| tiS | SPI_DOUT data setup time(1), 50% level | 10 | ns | ||
| tiH | SPI_DOUT data hold time(1), 50% level | 0 | ns | ||
| tCFDO | SPI_CLK falling to SPI_DOUT data valid, 50% level | 13 | ns | ||
| tCSZ | SPI_CSZ rising to SPI_DOUT HiZ | 6 | ns | ||
Figure 1. SPI Timing Diagram