DLPS096B November 2017 – May 2022 DLPC120-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PIN | I/O | ||
|---|---|---|---|
| NAME | NO. | DESCRIPTION | |
| VCCIO_1 | B2, D4, G4, K4, M3, N5, P3, R7 | PWR | 1.8 V (DDR2 MEM). |
| VCCIO_2 | BA2, D10, D12, D6, D8 | PWR | 1.8 V (DMD I/F). |
| VCCIO_3 | B15, E12, L14, N10, P13 | PWR | 3.3 V (MISC IO). |
| MEM_VREF0 | H4 | Voltage Referenced Input (50% of DDR Memory Voltage). | |
| MEM_VREF1 | N6 | Voltage Referenced Input (50% of DDR Memory Voltage). | |
| VCCA | G12 | PWR | PLL Power Input. |
| VSSA | F12 | PLL R-C Return Path (NOT a GND). | |
| VDD | G8, G9, H7, H10, J7, J10, K8, K9 | PWR | 1.2-V core logic power supply. |
| VDDQ | J12 | GND | EFUSE Programming voltage (Used in Manufacturing Test only.) Should be tied to GND. |
| GND | A1, A16, B3, C6, C9, C12, E3, G7, G10, H3, H8, H9, J8, J9, K7, K10, K12, L4, N3, N7, N14, P4, P6, P9, R2, T1, T7, T16 | GND | Common Ground (I/O Ground). |
| I/O | SUPPLY REFERENCE | |
|---|---|---|
| SUBSCRIPT | DESCRIPTION | |
| 1 | 1.8 V | VDD |
| 2 | 3.3 V | VCCIO_3 |
| 4 | 8 mA | VDD |
| 5 | 6, 10, or 12 mA | VCCIO_2 |
| 6 | 8 mA | VCCA |
| S | SSTL_18 | VCCIO_1 |
| 8 | 8 mA | VCCIO_3 |
| SD | SSTL_18 Differential | VCCIO_1 |
| TYPE | ||
| I | Input | N/A |
| O | Output | |
| B | Bidirectional | |
| PWR | Power | |
| GND | Ground return | |
| INTERNAL PULL-UP AND PULL-DOWN RESISTOR CHARACTERISTICS | VCCIO | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| Weak pull-up resistance | 3.3 V | 27 | 39 | 61 | kΩ |
| Weak pull-down resistance | 3.3 V | 32 | 46 | 79 | kΩ |
| 1.8 V | 52 | 91 | 180 | kΩ |