SLVSGJ9A
May 2024 – October 2025
DRV7308
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Absolute Maximum Ratings
6
ESD Ratings
7
Recommended Operating Conditions
8
Thermal Information
9
Electrical Characteristics
10
Timing Diagrams
11
Typical Characteristics
12
Detailed Description
12.1
Overview
12.2
Functional Block Diagram
12.3
Feature Description
12.3.1
Output Stage
12.3.2
Input Control Logic
12.3.3
ENABLE (EN) Pin Function
12.3.4
Temperature Sensor Output (VTEMP)
12.3.5
Brake Function
12.3.6
Slew Rate Control (SR)
12.3.7
Dead Time
12.3.8
Current Limit Functionality (ILIMIT)
12.3.9
Pin Diagrams
12.3.9.1
Four-Level Input Pin
12.3.9.2
Open-Drain Pin
12.3.9.3
Logic-Level Input Pin (Internal Pulldown)
12.4
Protections
12.4.1
GVDD Undervoltage Lockout
12.4.2
Bootstrap Undervoltage Lockout
12.4.3
Current Limit Protection
12.4.4
GaNFET Overcurrent Protection
12.4.5
Thermal Shutdown (OTS)
13
Application and Implementation
13.1
Application Information
13.2
Typical Application
13.2.1
Application
13.2.1.1
Application Information
13.2.2
Application Curves
14
Layout
14.1
Layout Guidelines
14.2
Layout Example
15
Revision History
16
Device and Documentation Support
16.1
Documentation Support
16.1.1
Related Documentation
16.2
Receiving Notification of Documentation Updates
16.3
Support Resources
16.4
Trademarks
16.5
Electrostatic Discharge Caution
16.6
Glossary
17
Mechanical, Packaging, and Orderable Information
17.1
Tape and Reel Information
Package Options
Mechanical Data (Package|Pins)
REN|68
MPQF707
REN|65
MPQF716C
Thermal pad, mechanical data (Package|Pins)
Orderable Information
slvsgj9a_oa
1
Features
Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
Up to 450V operating voltage
650V absolute maximum voltage
High output current capability: 5A Peak current
Low conduction loss: Low on-state resistance per GaN FET: 205mΩ R
DS(ON)
at T
A
= 25°C
Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
Integrated gate drives with slew rate control of phase node voltage
Slew rate options from 5V/ns to 40V/ns
Integrated fast bootstrap GaN rectifier
Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
Supports up to 100kHz hard switching
Integrates an amplifier for current sensing
Supports 3.3V and 5V logic inputs, up to 20V
BRAKE pin to turn on all low side GaN FETs
Integrated temperature sensor
>1.6mm clearance of motor phase (OUTx) to the adjacent pins.
2mm clearance between VM and GND
Integrated protection features
GVDD and bootstrap under voltage lockout
Over current protection for low-side GaN FET
Over temperature protection
PWM adaptive dead time insertion
Current limit protection for all three phases
Fault condition indication pin (nFAULT)