SLVSD12D May   2015  – July 2019 DRV8305-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Three-Phase Gate Driver
      2. 7.3.2 INHx/INLx: Gate Driver Input Modes
      3. 7.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 7.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 7.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 7.3.5.1 Smart Gate Drive Architecture: IDRIVE
        2. 7.3.5.2 Smart Gate Drive Architecture: TDRIVE
        3. 7.3.5.3 CSAs: Current Shunt Amplifiers
      6. 7.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 7.3.7 VREG: Voltage Regulator Output
      8. 7.3.8 Protection Features
        1. 7.3.8.1 Fault and Warning Classification
        2. 7.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 7.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 7.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 7.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 7.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 7.3.8.5 Fault and Warning Operating Modes
      9. 7.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 7.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 7.3.9.2 Reverse Supply Protection
        3. 7.3.9.3 MCU Watchdog
        4. 7.3.9.4 VREG Undervoltage (VREG_UV)
        5. 7.3.9.5 Latched Fault Reset Methods
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Up Sequence
      2. 7.4.2 Standby State
      3. 7.4.3 Operating State
      4. 7.4.4 Sleep State
      5. 7.4.5 Limp Home or Fail Code Operation
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Status Registers
        1. 7.6.1.1 Warning and Watchdog Reset (Address = 0x1)
          1. Table 10. Warning and Watchdog Reset Register Description
        2. 7.6.1.2 OV/VDS Faults (Address = 0x2)
          1. Table 11. OV/VDS Faults Register Description
        3. 7.6.1.3 IC Faults (Address = 0x3)
          1. Table 12. IC Faults Register Description
        4. 7.6.1.4 VGS Faults (Address = 0x4)
          1. Table 13. Gate Driver VGS Faults Register Description
      2. 7.6.2 Control Registers
        1. 7.6.2.1 HS Gate Drive Control (Address = 0x5)
          1. Table 14. HS Gate Driver Control Register Description
        2. 7.6.2.2 LS Gate Drive Control (Address = 0x6)
          1. Table 15. LS Gate Driver Control Register Description
        3. 7.6.2.3 Gate Drive Control (Address = 0x7)
          1. Table 16. Gate Drive Control Register Description
        4. 7.6.2.4 IC Operation (Address = 0x9)
          1. Table 17. IC Operation Register Description
        5. 7.6.2.5 Shunt Amplifier Control (Address = 0xA)
          1. Table 18. Shunt Amplifier Control Register Description
        6. 7.6.2.6 Voltage Regulator Control (Address = 0xB)
          1. Table 19. Voltage Regulator Control Register Description
        7. 7.6.2.7 VDS Sense Control (Address = 0xC)
          1. Table 20. VDS Sense Control Register Description
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 VREG Reference Voltage Input (DRV8305N)
      4. 8.2.4 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply Consideration in Generator Mode
    2. 9.2 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

PVDD = 4.4 to 45 V, DRV8305xQ: TJ = –40°C to 150°C, DRV8305xE: TJ = –40°C to 175°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (PVDD, DVDD, AVDD)
VPVDD PVDD operating voltage 4.4 45 V
Voltage regulator (VREG) operational 4.3 45 V
IPVDD_Operating PVDD operating supply current EN_GATE = HIGH; VREG no load; outputs HI-Z 20 mA
IPVDD_Standby PVDD standby supply current EN_GATE = LOW; VREG no load 5 mA
IPVDD_Sleep PVDD sleep supply current EN_GATE = LOW; Sleep Mode;
TJ = –40 to 150 °C		 60 200 μA
EN_GATE = LOW; Sleep Mode;
TJ = 150 to 175 °C		 250 uA
VAVDD Internal regulator voltage PVDD = 5.3 to 45 V 4.85 5 5.15 V
PVDD = 4.4 to 5.3 V PVDD – 0.4 PVDD V
VDVDD Internal regulator voltage 3.3 V
VOLTAGE REGULATOR (3.3-V or 5-V VREG)
VVREG VREG DC output voltage PVDD = 5.4 to 45 V VREG × 0.97 VREG VREG × 1.03 V
PVDD = 4.4 to 5.3 V; 5-V VREG PVDD – 0.4 PVDD V
PVDD = 4.4 to 5.3 V; 3.3-V VREG VREG × 0.97 VREG VREG × 1.03 V
VLineReg Line regulation 5.3 V ≤ VIN ≤ 12 V; IO = 1 mA 20 mV
VLoadReg Load regulation 100 μA ≤ IOUT ≤ 50 mA; 5-V VREG 50 150 mV
100 μA ≤ IOUT ≤ 50 mA; 3.3-V VREG 30 100 mV
LOGIC-LEVEL INPUTS (INHx, INLx, EN_GATE, SCLK, nSCS)
VIL Input logic low voltage 0 0.8 V
VIH Input logic high voltage 2 5 V
RPD Internal pulldown resistor To GND 100 kΩ
CONTROL OUTPUTS (nFAULT, SDO, PWRGD)
VOL Output logic low voltage nFAULT; SDO; PWRGD; IO = 5 mA 0.5 V
VOH Output logic high voltage SDO; IO = 5 mA VREG – 0.9 V
IOH Output logic high leakage VO = 3.3 V –1 1 μA
HIGH VOLTAGE TOLERANT LOGIC INPUT (WAKE)
VIL_WAKE Output logic low voltage 1.1 1.45 V
VIH_WAKE Output logic high voltage 1.46 1.8 V
GATE DRIVE OUTPUT (GHx, GLx)
VGHS High-side gate driver Vgs voltage VPVDD = 8 to 45 V; IGATE < 30 mA 9 10 10.7 V
VPVDD = 5.5 to 8 V; IGATE < 10 mA 7 10.7 V
VPVDD = 4.4 to 5.5 V; IGATE < 5 mA 5 9 V
VGLS Low-side gate driver Vgs voltage VPVDD = 8 to 45 V; IGATE < 30 mA 9 10 10.7 V
VPVDD = 5.5 to 8 V; IGATE < 10 mA 9 10.7 V
VPVDD = 4.4 to 5.5 V; IGATE < 5 mA 8 10.7 V
PEAK CURRENT DRIVE TIMES (GHx, GLx)
tDRIVE Peak sink or source current drive time TDRIVEP = 00; TDRIVEN = 00 220 ns
TDRIVEP = 01; TDRIVEN = 01 440 ns
TDRIVEP = 10; TDRIVEN = 10 880 ns
TDRIVEP = 11; TDRIVEN = 11 1780 ns
HIGH-SIDE PEAK CURRENT GATE DRIVE (GHx)
IDRIVEP_HS High-side peak source current IDRIVEP_HS = 0000 0.01 A
IDRIVEP_HS = 0001 0.02 A
IDRIVEP_HS = 0010 0.03 A
IDRIVEP_HS = 0011 0.04 A
IDRIVEP_HS = 0100 0.05 A
IDRIVEP_HS = 0101 0.06 A
IDRIVEP_HS = 0110 0.07 A
IDRIVEP_HS = 0111 0.125 A
IDRIVEP_HS = 1000 0.25 A
IDRIVEP_HS = 1001 0.5 A
IDRIVEP_HS = 1010 0.75 A
IDRIVEP_HS = 1011 1 A
IDRIVEP_HS = 1100, 1101, 1110, 1111 0.05 A
IDRIVEN_HS High-side peak sink current IDRIVEN_HS = 0000 0.02 A
IDRIVEN_HS = 0001 0.03 A
IDRIVEN_HS = 0010 0.04 A
IDRIVEN_HS = 0011 0.05 A
IDRIVEN_HS = 0100 0.06 A
IDRIVEN_HS = 0101 0.07 A
IDRIVEN_HS = 0110 0.08 A
IDRIVEN_HS = 0111 0.25 A
IDRIVEN_HS = 1000 0.5 A
IDRIVEN_HS = 1001 0.75 A
IDRIVEN_HS = 1010 1 A
IDRIVEN_HS = 1011 1.25 A
IDRIVEN_HS = 1100, 1101, 1110, 1111 0.06 A
LOW-SIDE PEAK CURRENT GATE DRIVE (GLx)
IDRIVEP_LS Low-side peak source current IDRIVEP_LS = 0000 0.01 A
IDRIVEP_LS = 0001 0.02 A
IDRIVEP_LS = 0010 0.03 A
IDRIVEP_LS = 0011 0.04 A
IDRIVEP_LS = 0100 0.05 A
IDRIVEP_LS = 0101 0.06 A
IDRIVEP_LS = 0110 0.07 A
IDRIVEP_LS = 0111 0.125 A
IDRIVEP_LS = 1000 0.25 A
IDRIVEP_LS = 1001 0.5 A
IDRIVEP_LS = 1010 0.75 A
IDRIVEP_LS = 1011 1 A
IDRIVEP_LS = 1100, 1101, 1110, 1111 0.05 A
IDRIVEN_LS Low-side peak sink current IDRIVEN_LS = 0000 0.02 A
IDRIVEN_LS = 0001 0.03 A
IDRIVEN_LS = 0010 0.04 A
IDRIVEN_LS = 0011 0.05 A
IDRIVEN_LS = 0100 0.06 A
IDRIVEN_LS = 0101 0.07 A
IDRIVEN_LS = 0110 0.08 A
IDRIVEN_LS = 0111 0.25 A
IDRIVEN_LS = 1000 0.5 A
IDRIVEN_LS = 1001 0.75 A
IDRIVEN_LS = 1010 1 A
IDRIVEN_LS = 1011 1.25 A
IDRIVEN_LS = 1100, 1101, 1110, 1111 0.06 A
PASSIVE GATE PULLDOWN (GHx, GLx)
RSLEEP_PD Gate pulldown resistance, sleep mode EN_GATE = LOW; GHx to GND; 1000 Ω
EN_GATE = LOW; GLx to GND; 500 Ω
RSTANDBY_PD Gate pulldown resistance, standby mode EN_GATE = LOW; GHx to GND; 1000 Ω
EN_GATE = LOW; GLx to GND; 500 Ω
ACTIVE GATE PULLDOWN (GHx, GLx)
IHOLD Gate pulldown current, holding EN_GATE = HIGH;
GHx to SHx; GLx to SLx		 50 mA
ISTRONG Gate pulldown current, strong EN_GATE = HIGH;
GHx to SHx; GLx to SLx		 1.25 A
GATE TIMING
tpd_lf-O Positive input falling to GHS_x falling PVDD = 12 V; CL = 1 nF; 50% to 50% 200 ns
tpd_lr-O Positive input rising to GHS_x rising PVDD = 12 V; CL = 1 nF; 50% to 50% 200 ns
td_min Minimum dead time after hand shaking 280 ns
tdtp Dead time in addition to td_min DEAD_TIME = 000 35 ns
DEAD_TIME = 001 52 ns
DEAD_TIME = 010 88 ns
DEAD_TIME = 011 440 ns
DEAD_TIME = 100 880 ns
DEAD_TIME = 101 1760 ns
DEAD_TIME = 110 3520 ns
DEAD_TIME = 111 5280 ns
tPD_MATCH Propagation delay matching between high-side and low-side 50 ns
tDT_MATCH Dead-time matching 50 ns
CURRENT SHUNT AMPLIFIER
GCSA Current sense amplifier gain GAIN_CSx = 00 10 V/V
GAIN_CSx = 01 19.9 V/V
GAIN_CSx = 10 39.8 V/V
GAIN_CSx = 11 78.8 V/V
GERR Current sense amplifier gain error Input differential > 0.025 V;
TJ = –40 to 150 °C		 –3.5 3.5 %
Input differential > 0.025 V;
TJ = 150 to 175 °C		 –4 4 %
tSETTLING Current sense amplifier settling time Settling time to 1%; no blanking;
GCSA = 10; Vstep = 0.46 V		 300 ns
Settling time to 1%; no blanking;
GCSA = 20; Vstep = 0.46 V		 600 ns
Settling time to 1%; no blanking;
GCSA = 40; Vstep = 0.46 V		 1.2 µs
Settling time to 1%; no blanking;
GCSA = 80; Vstep = 0.46 V		 2.4 µs
VIOS DC input offset GCSA = 10; input shorted; RTI –4 4 mV
VVREF_ERR Reference buffer error (DC) Internal or external VREF;
VREF_SCALE = 01		 –3 3 %
Internal or external VREF;
VREF_SCALE = 10		 –4 4 %
Internal or external VREF;
VREF_SCALE = 11		 –10 10 %
VDRIFTOS Input offset error drift GCSA = 10; input shorted; RTI 10 µV/C
IBIAS Input bias current VIN_COM = 0; SOx open 100 µA
IOFFSET Input bias current offset IBIAS (SNx-SPx); VIN_COM = 0;
SOx open		 1 µA
VIN_COM Common input mode range –0.15 0.15 V
VIN_DIFF Differential input range –0.48 0.48 V
CMRR Common mode rejection ration External input resistance matched;
DC; GCSA = 10		 60 80 dB
External input resistance matched;
20 kHz; GCSA = 10		 60 80 dB
PSRR Power supply rejection ratio DC (<120 Hz); GCSA = 10 150 dB
20 kHz; GCSA = 10 90 dB
VSWING Output voltage swing PVDD > 5.3 V 0.3 4.7 V
VSLEW Output slew rate GCSA = 10; RL = 0 Ω; CL = 60 pF 5.2 10 V/µs
IVO Output short circuit current SOx shorted to ground 20 mA
UGB Unity gain bandwidth product GCSA = 10 2 MHz
VOLTAGE PROTECTION
VAVDD_UVLO AVDD undervoltage fault AVDD falling, relative to GND 3.3 3.7 V
VVREG_UV VREG undervoltage fault VREG_UV_LEVEL = 00 VREG × 0.9 V
VREG_UV_LEVEL = 01 VREG × 0.8 V
VREG_UV_LEVEL = 10 VREG × 0.7 V
VREG_UV_LEVEL = 11 VREG × 0.7 V
VVREG_UV_DGL VREG undervoltage monitor deglitch time 1.5 2 µs
VPVDD_UVFL Undervoltage protection warning, PVDD PVDD falling 7.7 8.1 V
PVDD rising 7.9 8.3 V
VPVDD_UVLO1 Undervoltage protection lock out, PVDD PVDD falling 4.1 V
PVDD rising 4.3 V
VPVDD_UVLO2 Undervoltage protection fault, PVDD PVDD falling 4.2 4.4 V
PVDD rising 4.4 4.7 V
VPVDD_OVFL Overvoltage protection warning, PVDD PVDD falling 33.5 36 V
PVDD rising 32.5 35 V
VVCPH_UVFL Charge pump undervoltage protection warning, VCPH VCPH falling, relative to PVDD 8 V
VVCPH_UVLO2 Charge pump undervoltage protection fault, VCPH VCPH falling, relative to PVDD, SET_VCPH_UV = 0 4.6 5.3 V
VCPH falling, relative to PVDD, SET_VCPH_UV = 1 4.3 5 V
VVCP_LSD_UVLO2 Low-side regulator undervoltage fault, VCP_LSD VCP_LSD falling, relative to GND 6.4 7.5 V
VVCPH_OVLO Charge pump overvoltage protection fault, VCPH Relative to PVDD 14 18 V
VVCPH_OVLO_ABS Charge pump overvoltage protection fault, VCPH Relative to GND 60 V
TEMPERATURE PROTECTION
OTW_CLR Junction temperature-to clear overtemperature (OTW) warning(2) 100 130 150 °C
OTW_SET Junction temperature for overtemperature (OTW) warning(2) 135 160 185 °C
OTSD_CLR Junction temperature-to-clear overtemperature shutdown (OTSD)(2) 125 155 180 °C
OTSD_SET(1) Junction temperature for overtemperature shutdown (OTSD)(2) 160 185 210 °C
TEMP_FLAG1 Junction temperature flag setting 1(2) 105 °C
TEMP_FLAG2 Junction temperature flag setting 2(2) 125 °C
TEMP_FLAG3 Junction temperature flag setting 3(2) 135 °C
TEMP_FLAG4 Junction temperature flag setting 4(2) 185 °C
PROTECTION CONTROL
tpd,E-L Delay, error event to all gates low TBLANK = 00; TVDS = 00 1 µs
tpd,E-SD Delay, error event to nFAULTx low TBLANK = 00; TVDS = 00 1 µs
FET CURRENT PROTECTION (VDS SENSING)
VDS_TRIP Drain-source voltage protection limit VDS_LEVEL = 00000 0.06 V
VDS_LEVEL = 00001 0.068 V
VDS_LEVEL = 00010 0.076 V
VDS_LEVEL = 00011 0.086 V
VDS_LEVEL = 00100 0.097 V
VDS_LEVEL = 00101 0.109 V
VDS_LEVEL = 00110 0.123 V
VDS_LEVEL = 00111 0.138 V
VDS_LEVEL = 01000 0.155 V
VDS_LEVEL = 01001 0.175 V
VDS_LEVEL = 01010 0.197 V
VDS_LEVEL = 01011 0.222 V
VDS_LEVEL = 01100 0.25 V
VDS_LEVEL = 01101 0.282 V
VDS_LEVEL = 01110 0.317 V
VDS_LEVEL = 01111 0.358 V
VDS_LEVEL = 10000 0.403 V
VDS_LEVEL = 10001 0.454 V
VDS_LEVEL = 10010 0.511 V
VDS_LEVEL = 10011 0.576 V
VDS_LEVEL = 10100 0.648 V
VDS_LEVEL = 10101 0.73 V
VDS_LEVEL = 10110 0.822 V
VDS_LEVEL = 10111 0.926 V
VDS_LEVEL = 11000 1.043 V
VDS_LEVEL = 11001 1.175 V
VDS_LEVEL = 11010 1.324 V
VDS_LEVEL = 11011 1.491 V
VDS_LEVEL = 11100 1.679 V
VDS_LEVEL = 11101 1.892 V
VDS_LEVEL = 11110 2.131 V
VDS_LEVEL = 11111 2.131 V
tVDS VDS sense deglitch time TVDS = 00 0 µs
TVDS = 01 1.75 µs
TVDS = 10 3.5 µs
TVDS = 11 7 µs
tBLANK VDS sense blanking time TBLANK = 00 0 µs
TBLANK = 01 1.75 µs
TBLANK = 10 3.5 µs
TBLANK = 11 7 µs
tWARN_PULSE nFAULT pin warning pulse length 56 µs
PHASE SHORT PROTECTION
VSNSOCP_TRIP Phase short protection limit Fixed voltage 2 V
(1) Overtemperature shutdown (OTSD) is disabled by default for DRV8305xEPHPQ1 and may only be re-enabled through control register.
(2) Specified by design.