Product details

Rating Automotive Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM, 1xPWM Gate drive (A) 1 Vs (Min) (V) 4.4 Vs ABS (Max) (V) 45 Features LDO, Current Sense Amplifier, SPI/I2C, Watchdog Timer, Smart Gate Drive Operating temperature range (C) -40 to 125, -40 to 150
Rating Automotive Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM, 1xPWM Gate drive (A) 1 Vs (Min) (V) 4.4 Vs ABS (Max) (V) 45 Features LDO, Current Sense Amplifier, SPI/I2C, Watchdog Timer, Smart Gate Drive Operating temperature range (C) -40 to 125, -40 to 150
HTQFP (PHP) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

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Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

BOOSTXL-DRV8305EVM — DRV8305N 3-Phase Motor Drive BoosterPack Evaluation Module

The BOOSTXL-DRV8305EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8305 motor gate driver and CSD18540Q5B NexFET™ power MOSFET. The module has individual DC bus and phase voltage sense as well as individual low-side current shunt sense for sensorless BLDC algorithms. The module (...)

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Evaluation board

DRV8305-Q1EVM — DRV8305-Q1 Automotive 3-Phase Motor Gate Driver Evaluation Module

The DRV8305-Q1EVM evaluation module (EVM) is a 4.4 V to 45 V, 25 A, 3-phase motor drive and control system based on the DRV8305-Q1 automotive motor gate driver, TMS320F28027 motor control microcontroller, and CSD18540Q5B NexFET™ power MOSFET. The EVM allows for simple evaluation of the (...)

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Reference designs

TIDA-01330 — Automotive 2-Axis Power Seat Brushed DC Motor Drive Reference Design

The TIDA-01330 reference design implements the drive circuits for two independent brushed DC motors. It provides a solution for automotive power seats with a highly integrated 2-axis driver, reducing the overall bill of materials. The interface to a simple microcontroller Illustrates how the (...)
Reference designs

TIDA-00901 — Automotive 12-V, 200-W (20-A) BLDC Motor Drive Reference Design

This is a three-phase brushless DC motor drive designed to operate in 12-V automotive applications such as HVAC blowers. This reference design drives motors in the 200-W range and can handle currents up to 20 A. Utilizing either sensorless operation or external hall-effect sensors, the (...)
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HTQFP (PHP) 48 View options

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