SLVSDR9E October   2016  – January 2021 DRV8702-Q1 , DRV8703-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Characteristics
    8.     15
    9. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Bridge Control
        1. 7.3.1.1 Logic Tables
      2. 7.3.2  MODE Pin
      3. 7.3.3  nFAULT Pin
      4. 7.3.4  Current Regulation
      5. 7.3.5  Amplifier Output (SO)
        1. 7.3.5.1 SO Sample and Hold Operation
      6. 7.3.6  PWM Motor Gate Drivers
        1. 7.3.6.1 Miller Charge (QGD)
      7. 7.3.7  IDRIVE Pin (DRV8702-Q1 Only)
      8. 7.3.8  Dead Time
      9. 7.3.9  Propagation Delay
      10. 7.3.10 Overcurrent VDS Monitor
      11. 7.3.11 VDS Pin (DRV8702-Q1 Only)
      12. 7.3.12 Charge Pump
      13. 7.3.13 Gate Drive Clamp
      14. 7.3.14 Protection Circuits
        1. 7.3.14.1 VM Undervoltage Lockout (UVLO2)
        2. 7.3.14.2 Logic Undervoltage (UVLO1)
        3. 7.3.14.3 VCP Undervoltage Lockout (CPUV)
        4. 7.3.14.4 Overcurrent Protection (OCP)
        5. 7.3.14.5 Gate Driver Fault (GDF)
        6. 7.3.14.6 Thermal Shutdown (TSD)
        7. 7.3.14.7 Watchdog Fault (WDFLT, DRV8703-Q1 Only)
        8. 7.3.14.8 Reverse Supply Protection
      15. 7.3.15 Hardware Interface
        1. 7.3.15.1 IDRIVE (6-level input)
        2. 7.3.15.2 VDS (6-Level Input)
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 Serial Peripheral Interface (SPI)
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 VDS Configuration
        4. 8.2.2.4 Current Chopping Configuration
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHB|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Switching Characteristics

Over recommended operating conditions unless otherwise noted
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLIES (VM, AVDD, DVDD)
t(SLEEP)Sleep timenSLEEP = low to sleep mode100µs
t(wu)Wake-up timenSLEEP = high to output change1ms
tonTurn on timeVM > UVLO2 to output transition1ms
CHARGE PUMP (VCP, CPH, CPL)
fS(VCP)Charge-pump switching frequencyVM > UVLO2200400700kHz
CONTROL INPUTS (IN1, IN2, nSLEEP, MODE, nSCS, SCLK, SDI, PH, EN)
tpdPropagation delayIN1, IN2 to GHx or GLx500ns
FET GATE DRIVERS (GH1, GH2, SH1, SH2, GL1, GL2)
t(DEAD)Output dead time (DRV8702-Q1)Observed t(DEAD) depends on IDRIVE setting240ns
t(DEAD)Output dead time (DRV8703-Q1)TDEAD = 2’b00; Observed t(DEAD) depends on IDRIVE setting120ns
TDEAD = 2’b01; Observed t(DEAD) depends on IDRIVE setting240
TDEAD = 2’b10; Observed t(DEAD) depends on IDRIVE setting480
TDEAD = 2’b11; Observed t(DEAD) depends on IDRIVE setting960
t(DRIVE)Gate drive time2.5µs
CURRENT SHUNT AMPLIFIER AND PWM CURRENT CONTROL (SP, SN, SO, VREF)
tSSettling time to ±1%(1)VSP = VSN = GND to VSP = 240 mV, VSN = GND, AV= 10; C(SO) = 200 pF0.5µs
VSP = VSN = GND to VSP = 120 mV, VSN = GND, AV= 20; C(SO) = 200 pF1
VSP = VSN = GND to VSP = 60 mV, VSN = GND, AV= 40; C(SO) = 200 pF2
VSP = VSN = GND to VSP = 30 mV, VSN = GND, AV= 80; C(SO) = 200 pF4
toffPWM off-time (DRV8702-Q1)25µs
toffPWM off-time (DRV8703-Q1)TOFF = 0025µs
TOFF = 0150
TOFF = 10100
TOFF = 11200
t(BLANK)PWM blanking time2µs
PROTECTION CIRCUITS
t(UVLO)VM UVLO falling deglitch timeVM falling; UVLO report10µs
t(OCP)Overcurrent deglitch time3.744.3µs
t(RETRY)Overcurrent retry time2.833.2ms
t(WD)Watchdog time out (DRV8703-Q1)WD_DLY = 2’b0010ms
WD_DLY = 2’b0120
WD_DLY = 2’b1050
WD_DLY = 2’b11100
t(RESET)Watchdog timer reset period64µs
SPI
t(SPI_READY)SPI read after power onVM > VUVLO1510ms
td(SDO)SDO output data delay time, CLK high to SDO validCL = 20 pF30ns
taSCS access time, SCS low to SDO out of high impedance10ns
tdisSCS disable time, SCS high to SDO high impedance10ns
(1) Ensured by design