SBOS995A October   2019  – November 2020 INA290-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Amplifier Input Common-Mode Range
        1. 7.3.1.1 Input-Signal Bandwidth
        2. 7.3.1.2 Low Input Bias Current
        3. 7.3.1.3 Low VSENSE Operation
        4. 7.3.1.4 Wide Fixed Gain Output
        5. 7.3.1.5 Wide Supply Range
    4. 7.4 Device Functional Modes
      1. 7.4.1 Unidirectional Operation
      2. 7.4.2 High Signal Throughput
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 RSENSE and Device Gain Selection
      2. 8.1.2 Input Filtering
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Overload Recovery With Negative VSENSE
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.1.1 Input-Signal Bandwidth

The INA290-Q1 –3-dB bandwidth is gain dependent with several gain options of 20 V/V, 50 V/V, 100 V/V, 200 V/V, and 500 V/V as shown in Figure 6-8. The unique multistage design enables the amplifier to achieve high bandwidth at all gains. This high bandwidth provides the throughput and fast response that is required for the rapid detection and processing of overcurrent events.

The bandwidth of the device also depends on the applied VSENSE voltage. Figure 7-2 shows the bandwidth performance profile of the device over frequency as output voltage increases for each gain variation. As shown in Figure 7-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher with lower device gain options. Individual requirements determine the acceptable limits of error for high-frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required to determine the acceptance criteria and validate whether or not the performance levels meet the system specifications.


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Figure 7-2 Bandwidth vs Output Voltage