SBOS945A November   2020  – December 2020 INA849

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adjustable Gain Setting
      2. 8.3.2 Gain Drift
      3. 8.3.3 Wide Input Common-Mode Range
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
      3. 9.1.3 Thermal Effects due to Power Dissipation
    2. 9.2 Typical Application
      1. 9.2.1 Sensor Conditioning Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
      2. 9.2.2 Phantom Power in Microphone Preamplifier Circuit
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Ultra-low noise: 1-nV/√Hz input voltage noise (typical)
  • Precision super-beta input performance:
    • Low offset voltage: 35 µV (maximum)
    • Low offset voltage drift: 0.4 μV/°C (maximum)
    • Low input bias current: 20 nA (maximum)
    • Low gain drift: 5 ppm/°C for G = 1 (maximum)
  • Bandwidth: 28 MHz (G = 1), 8 MHz (G = 100)
  • Slew rate: 35 V/µs
  • Common-mode rejection: 120 dB (minimum) for maximum gain
  • Supply range:
    • Single supply: 8 V to 36 V
    • Dual supply: ±4 V to ±18 V
  • Specified temperature range:
    –40°C to +125°C
  • Package: 8-pin SOIC