SBOS945B November   2020  – April 2021 INA849

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adjustable Gain Setting
      2. 8.3.2 Gain Drift
      3. 8.3.3 Wide Input Common-Mode Range
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
      3. 9.1.3 Thermal Effects due to Power Dissipation
    2. 9.2 Typical Application
      1. 9.2.1 Sensor Conditioning Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
      2. 9.2.2 Phantom Power in Microphone Preamplifier Circuit
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VS Supply voltage Single supply, VS = (+VS)  40 V
Dual supply, VS = (+VS) – (–VS) ±20
VI Signal input pins Voltage (–VS ) – 0.5 (+VS) + 0.5 V
Current –10 +10 mA
Signal differential input voltage Gain ≤ 4 –VS +VS V
4 < Gain < 50 (–VS)  / Gain (+VS) / Gain
Gain > 50 –1 V +1 V
VREF Reference input voltage (–VS ) – 0.5 (+VS) + 0.5 V
VO Signal output voltage (–VS) – 0.5 (+VS) + 0.5 V
IS Output short-circuit(2) Continuous
TA Operating temperature(3) –40 125 °C
TJ Junction temperature(3) –40 175 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to VS / 2.
(3) As a result of the quiescent current, the supply voltage and load-dependent self-heating of the device must be considered.