SLVSJP6 August   2025 ISOM8110-EP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Insulation Specifications
    6. 5.6 Safety-Related Certifications
    7. 5.7 Safety Limiting Values
    8. 5.8 Electrical Characteristics
    9. 5.9 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active Mode
      2. 7.4.2 Saturation Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Detailed Design Procedure
          1. 8.1.1.2.1 Sizing RPULLUP
          2. 8.1.1.2.2 Sizing RIN
        3. 8.1.1.3 Application Curves
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3 Feature Description

The ISOM8110-EP device can isolate both analog and digital signals due to the current-driven input stage. When supplied an input current (IF) of at least 0.7mA to the AN pin. This powers the internal modulator which includes the modulator and current sense blocks. The IF is sensed and converted into a high frequency carrier that is passed across the isolation barrier. Once demodulated on the secondary side of the device, this is used to bias the output transistor which tries to sink current from an external source into the COL pin (IC) proportional to the IF value. The ratio of IC to IF is the current transfer ratio (CTR).